研究者学術情報データベース

デウラモモコ
出浦桃子
DEURA MOMOKO

所属立命館グローバル・イノベーション研究機構

職名准教授

論文
1.	2023/09	Control of Metal-rich Growth for GaN/AlN Superlattices Fabrication on Face-to-face Annealed Sputter-deposited AlN Templates │ Physica Status Solidi B │ 260 (9),2300061 (共著)
2.	2023/07	Substrate Terrace Width Dependence of Direct Growth of GaN on ScAlMgO₄ by Radio-Frequency Molecular Beam Epitaxy │ Physica Status Solidi B │ 260 (7),2300029 (共著)
3.	2023/04	Effect of layer structure of AlN interlayer on the strain in GaN layers during metal-organic vapor phase epitaxy on Si substrates │ Journal of Applied Physics │ 133 (16),165301 (共著)
4.	2023/02	Direct growth of GaN film on ScAlMgO₄ substrate by radio-frequency plasma-excited molecular beam epitaxy │ Applied Physics Express │ 16 (2),025504 (共著)
5.	2022/07	Supercritical fluid deposition for conformal Cu film formation on sub-millimeter-scale structures used to fabricate terahertz waveguides │ Applied Physics Express │ 15 (7),075502 (共著)
6.	2022/03/14	Suitability of metallic materials for constructing metal-coated dielectric terahertz waveguides │ Journal of Applied Physics │ 131 (10),105106-105106頁 (共著)
7.	2021/08/30	On-chip optical interconnection using integrated germanium light emitters and photodetectors │ Optics Express │ 29 (18),28021-28021頁 (共著)
8.	2021/08/07	Development of a model for evaluating propagation loss of metal-coated dielectric terahertz waveguides │ Journal of Applied Physics │ 130 (5),055104-055104頁 (共著)
9.	2021/02/01	Enhanced room-temperature electroluminescence from a germanium waveguide on a silicon-on-insulator diode with a silicon nitride stressor │ Optics Express │ 29 (3),3584-3584頁 (共著)
10.	2021/02	Kinetic analysis of face-centered-cubic TiAlN film deposition by chemical vapor deposition │ Materials Science and Engineering B │ 264,114992-114992頁 (共著)
11.	2019/05	Strain control of GaN grown on Si substrates using an AlGaN interlayer │ Journal of Crystal Growth │ 514,65-69頁 (共著)
12.	2018/08	Insight into physical processes controlling the mechanical properties of the wurtzite group-III nitride family │ Journal of Crystal Growth │ 500,23-28頁 (共著)
13.	2018	Characterization of femtosecond-laser-induced periodic structures on SiC substrates │ Japanese Journal of Applied Physics │ 57 (共著)
14.	2018	Mechanical properties of cubic-BN(111) bulk single crystal evaluated by nanoindentation │ Physica Status Solidi B │ 255,1700473/1-1700473/4頁 (共著)
15.	2017/12	Nanoscopic analysis of oxygen segregation at tilt boundaries in silicon ingots using atom probe tomography combined with TEM and ab initio calculations │ Journal of Microscopy │ 268 (3),230-238頁 (共著)
16.	2017/02	Impact of local atomic stress on oxygen segregation at tilt boundaries in silicon │ Applied Physics Letters │ 110 (6),062105/1-062105/5頁 (共著)
17.	2017/01/31	Synthesis of highly-oriented wurtzite-type BN crystal and evaluation of its mechanical properties using nanoindentation │ Japanese Journal of Applied Physics Rapid Communications │ 56 (3),030301/1-030301/4頁 (共著)
18.	2016/10	Recombination activity of nickel, copper, and oxygen atoms segregating at grain boundaries in mono-like silicon crystals │ Applied Physics Letters │ 109 (14),142105/1-142105/4頁 (共著)
19.	2016/01	Formation of SiC layer by carbonization of Si surface using CO gas │ Journal of Crystal Growth │ 434,77-80頁 (共著)
20.	2015/08/01	Characterization of silicon ingots: Mono-like versus high-performance multicrystalline │ Japanese Journal of Applied Physics │ 54 (8S1),08KD10-08KD10頁 (共著)
21.	2015/07	Elastic properties of indium nitrides grown on sapphire substrates determined by nano-indentation: In comparison with other nitrides │ AIP Advances │ 5 (7),077131-077131頁 (共著)
22.	2015/06	Nanoscopic mechanism of Cu precipitation at small-angle tilt boundaries in Si │ Physical Review B │ 91 (23),235315 (共著)
23.	2015/06	Three-dimensional evaluation of gettering ability for oxygen atoms at small-angle tilt boundaries in Czochralski-grown silicon crystals │ Applied Physics Letters │ 106 (25),251603 (共著)
24.	2014	InNの硬度とヤング率 │ 信学技報(IEICE Technical Report) │ 114 (336),45-448頁 (共著)
25.	2013/12	Effect of GaP and GaP/InGaP insertion layers on the structural and optical properties of InP quantum dots grown by metal-organic vapor phase epitaxy │ Microelectronic Engineering │ 112,143-148頁 (共著)
26.	2013/08	Highly stable GaN photocatalyst for producing H2 gas from water │ Japanese Journal of Applied Physics │ 52 (8),08JH04 (共著)
27.	2013/08	Investigation of Growth Mechanism for InGaN by Metal-Organic Vapor Phase Epitaxy Using Computational Fluid Simulation │ Japanese Journal of Applied Physics │ 52 (8),08JB13 (共著)
28.	2012/12	Highly efficient photochemical HCOOH production from CO2 and water using an inorganic system │ AIP Advances │ 2 (4),042160 (共著)
29.	2012/11	High Stability and Efficiency of GaN Photocatalyst for Hydrogen Generation from Water │ Japanese Journal of Applied Physics │ 51 (11),112601 (共著)
30.	2012/08	The effect of thin GaP insertion layer on InP nanostructure grown by metal-organic vapour phase epitaxys │ Canadian Journal of Chemical Engineering │ 90 (4),915-918頁 (共著)
31.	2012/03	740-nm emission from InGaN-based LEDs on c-plane sapphire substrates by MOVPE │ Journal of Crystal Growth │ 343 (1),13-16頁 (共著)
32.	2012	Hydrogen generation for 500 hours by photoelectrolysis of water using GaN │ Materials Research Society Symposium Proceedings │ 1446,1-5頁 (共著)
33.	2011/12	Origin of electron mobility enhancement in (111)-oriented InGaAs channel metal-insulator-semiconductor field-effect-transistors │ Microelectronic Engineering │ 88 (12),3459-3461頁 (共著)
34.	2011/04	High-Temperature Annealing Effect of Si in Group-V Ambient Prior to Heteroepitaxy of InAs in Metal-Organic Vapor Phase Epitaxy │ Japanese Journal of Applied Physics │ 50 (4),04DH07 (共著)
35.	2011	Post and In Situ Characterization of Strain Control and Crystal Quality in Quantum Well Solar Cell Structure │ Materials Science Forum │ 655-677,73-76頁 (共著)
36.	2010/10/15	Relationships between interface structures and electrical properties in the high-κ/III-V system │ Materials Research Society Symposium Proceedings │ 1194,53-64頁 (共著)
37.	2010/04	In situ reflectance monitoring for the MOVPE of strain-balanced InGaAs/GaAsP quantum-wells │ Journal of Crystal Growth │ 312 (8),1364-1369頁 (共著)
38.	2010/04	Initial growth of InAs on P-terminated Si(111) surfaces to promote uniform lateral growth of InGaAs micro-discs on patterned Si │ Journal of Crystal Growth │ 312 (8),1348-1352頁 (共著)
39.	2010/04	Twin-free InGaAs thin layer on Si by multi-step growth using micro-channel selective-area MOVPE │ Journal of Crystal Growth │ 312 (8),1353-1358頁 (共著)
40.	2010	Dependences of Initial Nucleation on Growth Conditions of InAs on Si by Micro-Channel Selective-Area Metal-Organic Vapor Phase Epitaxy │ Japanese Journal of Applied Physics │ 49 (12),125601 (共著)
41.	2009/12	High Electron Mobility Metal-Insulator-Semiconductor Field-Effect Transistors Fabricated on (111)-Oriented InGaAs Channels │ Applied Physics Express │ 2 (12),121201 (共著)
42.	2009/09/03	III‐V MISFET on Siを目指したSi(111)上InGaAsの選択ヘテロエピタキシャル成長 │ 電気学会電子・情報・システム部門大会講演論文集(CD-ROM) │ 2009,ROMBUNNO.TC1-2 (共著)
43.	2009/01	Dislocation-Free InGaAs on Si(111) Using Micro-Channel Selective-Area Metalorganic Vapor Phase Epitaxy │ Applied Physics Express │ 2 (1),011101 (共著)
44.	2009	In situ growth monitoring of strain-balanced quantum-well solar cells by metal-organic vapor phase epitaxy │ Proceedings of 34th IEEE Photovoltaic Specialists Conference │ ,001879-001882 (共著)
45.	2009	In Situ Monitoring of the Initial Nucleation for the Formation of Uniform InGaAs Micro-discs on Si │ EUROCVD 17 / CVD 17 │ 25 (8),521-524頁 (共著)
46.	2009	UNIFORM InGaAs MICRO-DISCS ON Si BY MICRO-CHANNEL SELECTIVE-AREA MOVPE │ 2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) │ ,48-51頁 (共著)
47.	2009	量子井戸太陽電池用InGaAs/GaAsP歪み補償量子井戸成長のin situモニタリング │ 結晶成長国内会議予稿集 │ 39th,213 (共著)
48.	2008/11	Effect of Ga content on crystal shape in micro-channel selective-area MOVPE of InGaAs on Si │ Journal of Crystal Growth │ 310 (23),4768-4771頁 (共著)
49.	2008/11	In situ passivation of GaAs surface with aluminum oxide with MOVPE │ Journal of Crystal Growth │ 310 (23),4808-4812頁 (共著)
50.	2008/11	Kinetic analysis of surface adsorption layer for InGaAsP-related binary materials using in situ RAS │ Journal of Crystal Growth │ 310 (23),4736-4740頁 (共著)
51.	2008	Epitaxial lateral overgrowth of InGaAs on SiO2 from (111) Si micro channel areas │ Physica Status Solidi C │ 5 (9),2733-+頁 (共著)
52.	2007/10	Kinetic analysis of surface adsorption layer in GaAs(001) metalorganic vapor phase epitaxy by in situ reflectance anisotropy spectroscopy │ Japanese Journal of Applied Physics │ 46 (10A),6519-6524頁 (共著)
53.	2007	Impact of atomistic surface structure on macroscopic surface reaction rate in MOVPE of GaAs │ Electrochemical and Solid State Letters │ 10 (4),H123-H126頁 (共著)