研究者学術情報データベース

アラキ　ツトム
荒木　努
ARAKI Tsutomu

所属理工学部電気電子工学科

職名教授

論文
1.	2022/02/15	Observation of Defect Structure in ScAlMgO₄ Crystal using X-ray Topography │ J. Cryst. Growth │ 580,126477/1-126477/5頁 (共著)
2.	2022/01/29	Cathodoluminescence Study of m-Plane α-Ga2O3 Grown by Mist Chemical Vapor Deposition │ phys. stat. sol. (b) │ 259,2100598/1-2100598/5頁 (共著)
3.	2021/10/15	Repeatability and Mechanisms of Threading Dislocation Reduction in InN Film Grown with In Situ Surface Modification by Radical Beam Irradiation │ Journal of the Society of Materials Science, Japan │ 70 (10),732-737頁 (共著)
4.	2020/10/15	RF-MBEを用いたファンデルワールスエピタキシーによるグラフェン構造への窒化インジウム結晶成長 │ 「材料」 │ 69 (10),701-706頁 (共著)
5.	2020/08/27	Correlation Between Crystal Warpage and Swelling of 4H-SiC Through Implantation and Annealing │ Semiconductor Science and Technology │ 35,105008/1-105008/7頁 (共著)
6.	2020/06/04	Thermal Conductivity of van der Waals Hetero-bilayer of MoS₂/MoSe₂ │ 13,75001/1-75001/5頁 (共著)
7.	2019/11/28	In Situ Synchrotron X-ray Diffraction Reciprocal Space Mapping Measurements in the RF-MBE Growth of GaInN on GaN and InN │ Crystals │ 9 (12),631/1-631/8頁 (共著)
8.	2019/05/22	Metal Covered van der Waals Epitaxy of Gallium Nitride Films on Graphitic Substrates by ECR-MBE │ Jpn. J. Appl. Phys. │ 58 (SC),SC1053/1-SC1053/5頁 (共著)
9.	2019/05/20	Characterization of the Electrical Properties of an InN Epilayer Using Terahertz Time-Domain Spectroscopic Ellipsometry │ Jpn. J. Appl. Phys. │ 58 (SC),SCCB22/1-SCCB22/4頁 (共著)
10.	2019/03	Enhancement of InN Luminescence by Introduction of Graphene Interlayer │ nanomaterials │ 9 (3),417/1-8 (共著)
11.	2019/01	Luminescence from AlGaN/GaN HEMT Structures by Very-Low-Energy (100 eV) Electron Beams using Beam Deceleration Technique │ Jpn. J. Appl. Phys. │ 58 (1),010902/1-4 (共著)
12.	2018/03	Surface and Bulk Electronic Structures of Unintentionally and Mg Doped In0.7Ga0.3N Epilayer by Hard X-ray Photoelectron Spectroscopy │ J. Appl. Phys. │ 123 (9),095701/1-8 (共著)
13.	2018/03	Threading Dislocation Reduction in InN Grown with in Situ Surface Modification by Radical Beam Irradiation │ Jpn. J. Appl. Phys. │ 57 (3),035502/1-4 (共著)
14.	2018/02	Reduction of Threading Dislocation Density in InN Film Grown with in situ Surface Modification by Radio-frequency Plasma-excited Molecular Beam Epitaxy │ MRS Advances │ 3 (18),931-936 (共著)
15.	2017/08	Measurement of the Properties of GaN Layers Using Terahertz Time-Domain Spectroscopic Ellipsometry │ phys. stat. sol. (b) │ 254 (8),1600767/1-4 (共著)
16.	2017/08	Microstructure and Thermal Stability of Rf-Plasma-Nitridated α-(AlGa)₂O₃ Grown by Mist CVD │ phys. stat. sol. (b) │ 254 (8),1600768/1-4 (共著)
17.	2017/03	Surface and Bulk Electronic Structures of Heavily Mg-doped InN Epilayer by Hard X-ray Photoelectron Spectroscopy │ J. Appl. Phys. │ 121,095703/1-5 (共著)
18.	2017/01	Influence of Defects and Indium Distribution on Emission Properties of Thick In-Rich InGaN Layers Grown by DERI Technique │ Semiconductor Science and Technology │ 32,025012/1-6 (共著)
19.	2015/11	InN NanoColumns Grown by Molecular Beam Epitaxy and Their Luminescence Properties │ Journal of Crystal Growth │ 430 (93-37) (共著)
20.	2015/02	Optical Properties of Ga0.82In0.18N P-N Homojunction Blue-Green Light-Emitting-Diode Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy │ Trans. Mat. Res. Soc. Japan │ 40 (2),149-152 (共著)
21.	2014/11	Free-Charge Carrier Parameters of N-Type, P-Type and Compensated InN:Mg Determined by　Infrared Spectroscopic Ellipsometry │ Thin Solid Films │ 571,384-388 (共著)
22.	2014/06	Radio-Frequency Plasma-Excited Molecular Beam Epitaxy Growth of GaN on Graphene/Si(100) Substrates │ Appl. Phys. Express │ 7,071001/1-3 (共著)
23.	2014/04	Effect of Mg Doping on the Structural and Free-Charge Carrier Properties of InN Thin Films │ J. Appl. Phys. │ 105,163504/1-10 (共著)
24.	2014/04	The Effect of Growth Parameters on the Mg Acceptor in InxGa1-xN:Mg and AlxGa1-xN:Mg │ phys. stat. sol. (c) │ 11 (3-4),594-597 (共著)
25.	2014/02	The Mg Impurity in Nitride Alloys │ AIP Conf. Proc. │ 1583,277-281 (共著)
26.	2014/01	Selective Growth of N-polar InN Through an In Situ AlN Mask on a Sapphire Substrate │ Appl. Phys. Lett. │ 104,032108/1-5 (共著)
27.	2013/11	Nucleation of Single GaN Nanorods with Diameters Smaller than 35 nm by Molecular Beam Epitaxy │ Appl. Phys. Lett. │ 103,203108/1-5 (共著)
28.	2013/10	Impact of Mg Concentration on Energy-Band-Depth Profile of Mg-doped InN Epilayers Analyzed by Hard X-ray Photoelectron Spectroscopy │ Appl. Phys. Lett. │ 103,162110/1-4 (共著)
29.	2013/08	Thickness Dependence of Structural and Electrical Properties of Thin InN Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy │ Jpn. J. Appl. Phys. │ 52 (8s),08JD06/1-3 (共著)
30.	2013/07	Systematic Investigation of Surface and Bulk Electronic Structure of Undoped In-polar InN Epilayers by Hard X-ray Photoelectron Spectroscopy │ J. Appl. Phys. │ 114,033505/1-6 (共著)
31.	2013/05	Growth of Thick InGaN Films with Entire Alloy Composition Using Droplet Elimination by Radical-Beam Irradiation │ Journal of Crystal Growth │ 377,123-126 (共著)
32.	2013/05	Thickness Dependence of Structural and Electrical Properties of Thin InN Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy │ Jpn. J. Appl. Phys. │ 52,08JD06/1-3 (共著)
33.	2013/04	Application of DERI Method to InN/InGaN MQW, Thick InGaN and InGaN/InGaN MQW Structure Growth │ Proceedings of SPIE "Gallium Nitride Materials and Devices VIII │ 8625,862502 (共著)
34.	2013/03	P-type InGaN across the entire alloy composition range │ Appl. Phys. Lett. │ 102,102111/1-4 (共著)
35.	2012/12	New Low-Temperature Growth Method for High-Quality Low-Temperature GaN Layer by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy │ Appl. Phys. Express │ 5,125503/1-3 (共著)
36.	2012/08	High-Sensitivity Ozone Sensing Using 280 nm Deep Ultraviolet Light-Emitting Diode for Detection of Natural Hazard Ozone │ Journal of Environmental Protection │ 3,695-699 (共著)
37.	2012/02	Fabrication of Nano-structure of A-plane InN on Patterned A-plane GaN Template by ECR-MBE │ physica status solidi (a) │ 209,447-450 (共著)
38.	2012/01	MBE法による配列制御InNナノコラム成長 │ 日本結晶成長学会誌 │ 38,47－53 (共著)
39.	2011/12	Inactivation of Bacterial Viruses in Water Using Deep Ultraviolet Semiconductor Light-Emitting Diode │ JOURNAL OF ENVIRONMENTAL ENGINEERING-ASCE │ 137 (12),1215-1218 (共著)
40.	2011/05	Investigation on InN Mole Fraction Fluctuation in InGaN Films Grown by RF-MBE │ phys. stat. sol. (c) │ 8,1499-1502 (共著)
41.	2011/04	Application of Droplet Elimination Process by Radical-Beam Irradiation to InGaN Growth and Fabrication of InN/InGaN Periodic Structure │ Jpn. J. Appl. Phys. │ 50,04DH08/1-4 (共著)
42.	2011/02	Growth and Fabrication of InN-Based III-Nitride Device Structure Using Droplet Elimination Process by Radical Beam Irradiation │ Proceedings of SPIE photonic West 2011 │ 7939,793904 (共著)
43.	2011/01	In Situ Investigation of Growth Mechanism during Molecular Beam Epitaxy of In-Polar InN │ Jpn. J. Appl. Phys. │ 50,01AE02 (共著)
44.	2011/01	Mg Doped InN and Confirmation of Free Holes in InN │ Appl. Phys. Lett. │ 98,042104-1 (共著)
45.	2010/08	Plasmon-Induced Purcell Effect in InN/In Metal-Semiconductor Nanocomposites │ Phys. Rev. B. │ 82,073304/1-4 (共著)
46.	2010	Optical Polarization Anisotropy of Nonpolar InN Epilayers │ phys. stat. sol. (a) │ 207,1356-1360 (共著)
47.	2010	RF-MBE Growth of InN/InGaN MQW Structures by DERI and Their Characterization │ Proceedings of 22nd International Conference on Indium Phosphide and Related Materials（IPRM2010） │ ,92-95 (共著)
48.	2009/11	RF-MBE法によるr面 (10-12) Sapphire基板上、半極性面InNの結晶成長 │ 電気学会論文誌Ｃ　電子・情報・システム部門誌 │ 129,1974-1977 (共著)
49.	2009/04	Inconsistency of Basic Optical Processes in Plasmonic Nanocomposites │ Phys. Rev. B. │ 79,153105/1-4 (共著)
50.	2009	Dependence of Annealing Temperature on Electrical Properties of GaN MIS Capacitors │ phys. stat. sol.(c) │ 6,S1061-S1064 (共著)
51.	2009	Electrical and optical properties of InN with periodic metallic in insertions │ Semiconductors │ 43,285-288 (共著)
52.	2009	Fabrication of Position-Controlled InN Nanocolumns by ECR-MBE │ SPIE Photonics West 2009 Proceedings │ 7216,72160N1-8 (共著)
53.	2009	Growth and characterization of N-polar and In-polar InN films by RF-MBE │ J. Cryst. Growth │ 311,2780-2782 (共著)
54.	2009	Growth of M-plane(10-10) InN on LiAlO₂(100) Substrate │ phys. stat. sol. (c) │ 6,S425-S428 (共著)
55.	2009	In-Situ Cyclic Pulse-Annealing of InN on AIN/Si during IR-Lamp-Heated MBE Growth │ J. Cryst. Growth │ 311,2776-2779 (共著)
56.	2009	Novel InN growth method under In-rich condition on GaN/Al₂O₃(0001) templates │ phys. stat. sol. (c) │ 6,S360-S363 (共著)
57.	2009	TEM Characterization of M-plane InN Grown on (100) LiAlO₂ Substrate by RF-MBE │ phys. stat. sol. (c) │ 6,S429-S432 (共著)
58.	2008/01	Effects of Traps Formed by Threading Dislocation on Off-State Breakdown Characteristics in GaN Buffer Layer for AlGaN/GaN Heterostructure Field-Effect Transistors │ Applied Physics Express │ 1,011103-1-011103-3 (共著)
59.	2008	Correlation Between Threading Dislocations and Nonradiative Recombination Centers in InN Observed by IR Cathodoluminescence │ Journal of Electronic Materials │ 37,603-606 (共著)
60.	2008	Transmission Electron Microscopy Characterization of Position-Controlled InN Nanocolumns │ Jpn. J. Appl. Phys │ 47,5330-5332 (共著)
61.	2007/10	Growth of In-rich InAlN films on(0001) sapphire by RF-MBE and their properties │ Journal of Electronic Materials │ 36,1313-1319 (共著)
62.	2007	An Analysis of the Increase in Sheet Resistance with the Lapse of Time of AlGaN/GaN HEMT Structure Wafer │ phys. stat. sol. (c) │ 4,2678-2681 (共著)
63.	2007	Awaking of ferromagnetism in GaMnN through control of Mn valence │ Appl. Phys. Lett. │ 90,012504-1-012504-3 (共著)
64.	2007	Correlation between the Leakage Current and the Thickness of GaN Layer of AlGaN/GaN HFET │ phys. stat. sol. (c) │ 4,2728-2731 (共著)
65.	2007	Effect of low temperature InGaN interlayers on structural and optical properties of In-rich InGaN │ J. Cryst. Growth │ 300,177-181 (共著)
66.	2007	Effects of non-stoichoimetry and compensation on fundamental parameters of heavily-doped InN │ phys. stat. sol. (c) │ 4,2474-2477 (共著)
67.	2007	Gate Leakage Currents of AlGaN/GaN HEMT Structures Grown by Metalorganic Vapor Phase Epitaxy │ phys. stat. sol. (c) │ 4,2690-2694 (共著)
68.	2007	Growth of A-plane(11-20) In-rich InGaN on r-plane(10-12) sapphire by RF-MBE │ phys. stat. sol. (c) │ 4,2560-2563 (共著)
69.	2007	Growth of hexagonal GaN films on the nitridated -Ga₂O₃ substrates using RF-MBE │ phys. stat. sol. (c) │ 4,2306-2309 (共著)
70.	2007	Growth of InN nanocolumns by RF-MBE │ J. Cryst. Growth │ 301-302,490-495 (共著)
71.	2007	Kelvin probe force microscopy study of surface potential transients in cleaved AlGaN/GaN high electron mobility transistors │ Appl. Phys. Lett. │ 90,213511-1-213511-3 (共著)
72.	2007	Mg-doped N-polar InN Grown by RF-MBE │ Mater. Res. Soc. Symp. Proc. │ 955,0955-I08-01 (共著)
73.	2007	Microstructure of A-plane InN grown on R-plane Sapphire by ECR-MBE │ phys. stat. sol. (c) │ 4,2556-2559 (共著)
74.	2007	Position-Controlled InN Nano-dot Growth on Patterned Substrates by ECR-MBE │ Mater. Res. Soc. Symp. Proc. │ 955,0955-I07-40 (共著)
75.	2007	Temperature Distribution Analysis of AlGaN/GaN HFETs Operated Around Breakdown Voltage Using Micro-Raman Spectroscopy and Device Simulation │ phys. stat. sol. (c) │ 4,2744-2747 (共著)
76.	2007	Thermal Analysis of AlGaN/GaN HFETs Using Electro-Thermal Simulation and Micro-Raman Spectroscopy │ Proceedings of SPIE │ 6473,647317-1-647317-10 (共著)
77.	2007	Thermal and Chemical Stabilities of In-and N-Polar InN Surfaces │ phys. stat. sol. (b) │ 244,1834-1838 (共著)
78.	2007	Time transient of surface potential of cleaved cross-sectional AlGaN/GaN HEMT by Kelvin probe force microscopy │ Appl. Phys. Lett. │ 90,213511 (共著)
79.	2006	A-plane(1120) InN growth on nitridated R-plane(1012) sapphire by ECR-MBE │ phys. stat. sol. (b) │ 243,1468-1471 (共著)
80.	2006	Al mole fraction dependence of deep levels in AlGaN/GaN-HEMT structures estimated by CV profiling │ Mat. Res. Soc. Symp. Proc. │ 892,FF10-01 (共著)
81.	2006	Analysis of the local structure of InN with a bandgap energy of 0.8 and 1.9 eV and annealed InN using X-ray absorption fine structure measurements │ phys. stat. sol. (c) │ 3,1746-1749 (共著)
82.	2006	Coexistence of Mn²⁺and Mn³⁺ in ferromagnetic GaMnN │ J. Phys. Cond. Mat. │ 18,4615-4621 (共著)
83.	2006	Correlation between resistivity and yellow luminescence intensity of GaN layers grown by MOCVD │ Mat. Res. Soc. Symp. Proc. │ 892,FF23-14 (共著)
84.	2006	ECR-MBE法による加工基板上InN ナノドットの配列・サイズ制御 │ 106,117-120 (共著)
85.	2006	Fabrication of InN/InGaN multiple quantum well structures by RF-MBE │ phys. stat. sol. (c) │ 3,1599-1603 (共著)
86.	2006	Growth and properties of InN,InGaN,and InN/InGaN quantum wells │ phys. stat. sol. (a) │ 203,93-101 (共著)
87.	2006	Growth of c-GaN films on the nitridated β-Ga₂O₃ substrates using RF-MBE │ Mat. Res. Soc. Symp. Proc. │ 892,FF28-06 (共著)
88.	2006	Growth of high-quality In-rich InGaN alloys by RF-MBE for the fabrication of InN-based quantum well structures │ J. Cryst. Growth │ 288,283-288 (共著)
89.	2006	High-quality InN grown on KOH wet etched N-polar InN template by RF-MBE │ phys. stat. sol. (a) │ 203,1691-1695 (共著)
90.	2006	Polarity Determination of InN　by Atomic Hydrogen Irradiation │ Jpn. J. Appl. Phys. │ 45,L384-L386 (共著)
91.	2006	Polarized Photoluminescence Study on AlGaN of AlGaN/GaN Heterostructure │ Mat. Res. Soc. Symp. Proc. │ 892,FF23-03 (共著)
92.	2006	マイクロラマン分光によるAlGaN/GaN HFET 高負荷時の温度分布解析 │ 106,39-43 (共著)
93.	2005	AlGaN/GaN HEMTのゲートリーク │ 105,75-78 (共著)
94.	2005	AlGaN/GaN HFETにおけるGaN層リーク電流とルミネセンス強度との相関 │ 64,75-78 (共著)
95.	2005	Correlation among Growth Conditions, Crystal Structures and Optical Properties of InN │ phys. stat. sol. c │ 2,841-844 (共著)
96.	2005	Cubic InN Growth on R-plane (10-12) Sapphire by ECR-MBE │ Inst. Phys. Conf. Ser. │ 184,239-242 (共著)
97.	2005	ECR-MBE法による(10-12)サファイア基板上(11-20)InNの成長 │ 105,9-12 (共著)
98.	2005	Effects of the nitridation process of (0001) sapphire on crystalline quality of InN grown by RF-MBE │ Mat. Res. Soc. Symp. Proc. │ 831,E4.2.1- E4.2.6 (共著)
99.	2005	Fabrication and Characterization of InN-Based Quantum Well Structures Grown by Radio-Frequency Plasma-Assisted Molecular-Beam Epitaxy │ Jpn. J. Appl. Phys. │ 44,L230-L232 (共著)
100.	2005	GaNバッファ層リーク電流とルミネセンス強度との相関に関する研究 │ 105,71-74 (共著)
101.	2005	Growth of high-quality InN films by insertion of high-temperature InN buffer layer │ J. Cryst. Growth │ 275,e1321-e1326 (共著)
102.	2005	Growth of In-rich InGaN on InN template by radio-frequency plasma assisted molecular beam epitaxy │ J. Cryst. Growth │ 275,e1053-e1058 (共著)
103.	2005	Growth of polycrystalline InN on silica glass by ECR-MBE │ phys. stat. sol. (c) │ 2,2316-2319 (共著)
104.	2005	InNの光学的特性の結晶品質依存性 │ 105,43-48 (共著)
105.	2005	KOH水溶液を用いたInNの極性評価 │ 105,39-42 (共著)
106.	2005	Optical emission spectroscopy during InN growth by ECR-MBE │ J. Cryst. Growth │ 275,e1073-e1077 (共著)
107.	2005	Polarity determination of InN by wet etching │ phys. stat. sol. (a) │ 202,773-776 (共著)
108.	2005	RF-MBE成長したInN薄膜に対する熱酸化処理の影響 │ 105,49-54 (共著)
109.	2005	RF-MBE法によるInN/InGaN量子井戸構造の作製とその評価 │ 105,23-28 (共著)
110.	2005	RF-MBE法による高InN モル分率InGaN の成長とその構造および発光特性の評価 │ 64,55-62 (共著)
111.	2005	Structural　and luminescence properties of In-rich InGaN layers grown on InN templates by RF-MBE │ phys. stat. sol. (a) │ 202,2642-2647 (共著)
112.	2005	凹凸加工InNテンプレートを用いたInNの高品質化 │ 105,1-4 (共著)
113.	2005	原子状水素照射によるInNの極性評価 │ 105,13-16 (共著)
114.	2004	Band-Gap Energy and Physical Properties of InN Grown by RF-Molecular Beam Epitaxy │ Mat. Res. Soc. Symp. Proc. │ 798,189-200 (共著)
115.	2004	Characterization of Photovoltaic Cells Using n-InN/p-Si Grown by RF-MBE │ Mat. Res. Soc. Symp. Proc. │ 798,237-242 (共著)
116.	2004	Growth and properties of In-rich InGaN films grown on (0001) sapphire by RF-MBE │ phys. stat. sol. (b) │ 241,2843-2848 (共著)
117.	2004	Growth of InN and InGaN on Si substrate for solor cell applications │ 2003 International Symposium on Compound Semiconductors; Post-Conference Proceedings │ -,214-219 (共著)
118.	2004	InNの光学的特性の結晶品質依存性－InNの真のバンドギャップエネルギーに関する考察－ │ 63,171-176 (共著)
119.	2004	InNテンプレートを用いた高In組成InGaNの作成と評価 │ 63,165-170 (共著)
120.	2004	Radio frequency-molecular beam epitaxial growth oｆ InN epitaxial films on (0001) sapphire and their properties │ J. Vac. Sci. Tech. B │ 22,2139-2143 (共著)
121.	2004	Recent Development of InN RF-MBE Growth and its Structural and Property Characterization │ phys. stat. sol. (c) │ 1,1487-1495 (共著)
122.	2004	RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys │ AAPPS Bulletin │ 14,2-13 (共著)
123.	2004	Spectroscopic observation of oxidation process in InN │ Appl. Phys. Lett. │ 84,212-214 (共著)
124.	2004	Structural and Optical Properties of Polycrystlline InN Grown on Silica Glass by ECR-MBE │ 63,153-157 (共著)
125.	2004	Structural Characterization of Low -Temperature InN Buffer Layer Grown by RF-MBE │ Mat. Res. Soc. Symp. Proc. │ 798,243-248 (共著)
126.	2004	The effect of substrate polarity on the growth of InN by RF-MBE │ J. Cryst. Growth │ 269,155-161 (共著)
127.	2004	Wet etching of N- and In- Polar InN │ 63,159-163 (共著)
128.	2003	ECR-MBE法による石英ガラス基板上多結晶GaNの結晶成長と特性評価 │ 30,73-81 (共著)
129.	2003	Effect of AlN buffer layer on the growth of InN epitaxial film on Si substrate │ phys. stat. sol. (b) │ 240,429-432 (共著)
130.	2003	Electrical and optical properties of InN/Si heterostructure │ Mat. Res. Soc. Symp. Proc. │ 743,719-724 (共著)
131.	2003	Growth and properties of polyerystalline GaN on ZnO/Si substrates by ECR-MBE │ Inst. Phys. Conf. Ser. │ 174,13-16 (共著)
132.	2003	Influence of substrate polarity on growth of InN films by RF-MBE │ phys. stat. sol. (c) │ 0,2810-2813 (共著)
133.	2003	InNおよびInGaNの結晶成長と構造および特性の評価 │ 72,565-572 (共著)
134.	2003	MBE-Growth, Characterization and Properties of InN and InGaN │ phys. stat. sol. (a) │ 200,202-208 (共著)
135.	2003	Microstructure of InN films grown by RF-MBE │ 62,161-167 (共著)
136.	2003	RF-MBEによる高InN組成InGaNの結晶成長とその評価 │ 62,169-174 (共著)
137.	2003	Single crystalline InN films grown on Si (111) substrates │ Inst. Phys. Conf. Ser. │ 174,17-20 (共著)
138.	2003	Single crystalline InN films grown on Si substrates by using a brief substrate nitridation process │ Mat. Res. Soc. Symp. Proc. │ 743,163-168 (共著)
139.	2003	Study on cubic GaN growth on (001) rutile TiO₂ substrates by ECR │ Mat. Res. Soc. Symp. Proc. │ 743,169-174 (共著)
140.	2003	Surface treatment of GaN and InN using (NH₄)₂S_X │ phys. stat. sol. (c) │ 0,2031-2034 (共著)
141.	2003	TEM Characterization of InN films grown by RF-MBE │ phys. stat. sol. (c) │ 0,2798-2801 (共著)
142.	2002	ECR-MBE法によるZnO/Si基板上多結晶GaNの結晶成長 │ 102,33-36 (共著)
143.	2002	Effect of hydrogen on morphological changes in columnar structure of GaN grown by ECR-MBE │ J. Cryst. Growth │ 237-239,983-987 (共著)
144.	2002	Effect of Nitridation on Crystallinity of Polycrystalline GaN Grown on Silica Glass by ECR-MBE │ phys. stat. sol. (c) │ 0,200-204 (共著)
145.	2002	Effect of sapphire substrate nitridation on determining rotation domain in GaN growth │ J. Cryst. Growth │ 237-239,993-997 (共著)
146.	2002	Growth Condition Dependence of InN film a-Axis Directions on Sapphire(0001) Substrate │ Inst. Phys. Conf. Ser. │ 170,765-770 (共著)
147.	2002	Growth of high-quality InN using low-temperature intermediate layers by RF-MBE │ J. Cryst. Growth │ 237-239,1017-1021 (共著)
148.	2002	Growth Temperature Dependence of Indium Nitride Crystalline Quality Grown by RF-MBE │ phys. stat. sol. (b) │ 234,796-800 (共著)
149.	2002	Investigation of the Optimum Growth Conditions of Wide-Bandgap Quaternary InAlGaN for UV-LEDs │ Mat. Res. Soc. Symp. Proc. │ 693,I3.42.1-I3.42.6 (共著)
150.	2002	Marked enhancement of 320-360nm ultraviolet emission in quaternary InxAlyGa1-x-yN with In-segregation effect │ Appl. Phys. Lett. │ 80,207-209 (共著)
151.	2002	Optical properties of InxGa1-xN with entire alloy composition on InN buffer layer grown by RF-MBE │ phys. stat. sol. (b) │ 234,750-754 (共著)
152.	2002	RF-MBE成長単結晶InN膜の光学特性 │ 102,89-92 (共著)
153.	2002	RF-MBE法を用いたSi基板上単結晶InN結晶成長とその評価 │ 61,151-156 (共著)
154.	2002	RF-MBE法を用いた高In組成InxGa1-xNの結晶成長と特性評価 │ 102,39-44 (共著)
155.	2002	The c-axis and a-axis orientations in InN grown directly on (0001) sapphire substrate by RF-MBE │ Proceedings of 14th Indium Phosphide at Related Materials │ －,643-646 (共著)
156.	2002	Two Step Growth of InN Films on Sapphire(0001) Substrates without Nitridation Process by RF-MBE │ Mat. Res. Soc. Symp. Proc. │ 693,I3.41.1-I3.41.6 (共著)
157.	2002	Valence transition of Eu ions in GaN near the surface │ J. Cryst. Growth │ 237-239,1167-1171 (共著)
158.	2002	窒化石英ガラス基板上多結晶GaNの結晶成長と発光特性 │ 61,143-149 (共著)
159.	2002	窒化物半導体の新展開 │ 29,3-11 (共著)
160.	2001	Cathodo luminescence and Micro-Structure of Polycrystalline GaN Grown on ZnO/Si │ Mat. Res. Soc. Symp. Proc. │ 639,G6.20.1-G6.20.6 (共著)
161.	2001	ECR-MBE法により成長したGaNナノコラムの形態変化に対する水素の効果 │ 60,109-114 (共著)
162.	2001	Electrical Properties of InN Grown by RF-MBE │ Mat. Res. Soc. Symp. Proc. │ 639,G11.18.1-G11.18.5 (共著)
163.	2001	Growth of AlN films on SiC substrates by RF-MBE and RF-MEE │ J. Cryst. Growth │ 230,392-397 (共著)
164.	2001	Growth of High-Electron-Mobility InN by RF Molecular Beam Epitaxy │ Jpn. J. Appl. Phys. │ 40,L91-93 (共著)
165.	2001	Polarity of High-quality Indium Nitride grown by RF Molecular Beam Epitaxy │ phys. stat. sol. (b) │ 228,13-16 (共著)
166.	2001	Relationship between Microscopic Structure and Optical Property of Polycrystalline GaN on Silica Glass │ Mat. Res. Soc. Symp. Proc. │ 639,G6.43.1-G6.43.6 (共著)
167.	2001	RF-MBE法InN成長における初期成長過程に関する検討 │ 60,133-141 (共著)
168.	2001	RF-MBE法による高品質高膜InN成長のための低温中間層導入に関する検討 │ 60,125-131 (共著)
169.	2001	Structural Control of Cubic and Hexagonal GaN by Changing the Electric Bias During ECR-MBE Growth │ phys. stat. sol. (a) │ 188,677-680 (共著)
170.	2001	Study of Epitaxial Relationship in InN Growth on Sapphire (0001) by RF-MBE │ phys. stat. sol. (b) │ 228,17-20 (共著)
171.	2001	Threading Dislocations and Optical Properties of GaN and GaInN │ phys. stat. sol. (b) │ 228,395-402 (共著)
172.	2000	Annealing Effect of Low Temperature Growth of InN Films by RF-MBE │ Proc.Int. Workshop on Nitride Semiconductors IPAP Conf. Series │ 1,182-185 (共著)
173.	2000	ECR-MBE growth of GaN using hydrogen-nitrogen mixed gas plasma │ IEICE Trans. Electron. │ E83-C,627-632 (共著)
174.	2000	RF-MBE成長InN膜の表面構造と電気的特性 │ 59,11-18 (共著)
175.	2000	RF-MBE法によるSiC基板上GaN成長における水素添加効果 │ 100,7-12 (共著)
176.	2000	RF-MBE法を用いて成長したInN膜の電気的特性 │ 100,25-30 (共著)
177.	2000	Structural Analysis of AlN Films Grown on SiC Substrate by RF-MBE and RF-MEE │ Proc.Int. Workshop on Nitride Semiconductors IPAP Conf. Series │ 1,194-197 (共著)
178.	2000	Structural analysis of GaN layers with columnar structures grown by hydrogen-assisted ECR-MBE │ J. Cryst. Growth │ 210,162-166 (共著)
179.	2000	Structural characterization of GaN grown by hydrogen-assisted ECR-MBE using electron microscopy │ J. Cryst. Growth │ 209,368-372 (共著)
180.	2000	Structure and morphology characters of GaN grown by ECR-MBE using hydrogen-nitrogen mixed gas plasma │ Mat. Res. Soc. Symp. Proc. │ 595,W3.37.1-W3.37.6 (共著)
181.	2000	ZnO/Siおよび石英ガラス基板上多結晶GaNの極微構造とCL特性 │ 100,25-30 (共著)
182.	2000	石英ガラスおよびZnO/Si基板上多結晶GaNの極微構造とCL特性 │ 59,1-9 (共著)
183.	1999	MBE法によるGaN成長と励起窒素源に関する検討 │ -,35-41 (共著)
184.	1999	Microstructures of Cubic and Hexagonal GaN Grown on (0001) Sapphire by ECR-MBE with Various Electric Biases │ phys. stat. sol. (a) │ 176,487-491 (共著)
185.	1998	Crystal Growth and Optical Property of GaN on Silica Glass by Electron-Cyclotron-Resonance Plasma-Excited Molecular Beam Epitaxy │ Jpn. J. Appl. Phys. │ 37,L1214-L1216 (共著)
186.	1998	ZnO/Si基板上および石英ガラス基板上多結晶GaNの結晶構造と発光特性 │ 98,13-18 (共著)