Researcher Database

MOURI SHINICHIRO

Department / Course College of Science and Engineering Department of Electrical and Electronic Engineering

Title / Position Associate Professor

Academic conference presentation
1.	2023/11/28	Mist CVD Modulated High-κ a-Al1-xTixOy Films for p-WS0.3Se0.7-channel MOSFETs (MRS Fall Meeting & Exhibit)
2.	2023/11/16	Direct Synthesis of MoS2 and WS2Se2-x on High-κ AlxTi1-xOy Using Mist CVD Toward Transfer-free MOSFETs Devices (36th International Microprocesses and Nanotechnology Conference (MNC 2023))
3.	2023/11/16	Spatial and remote charge density modulation methodfor MoS2 using periodically polarization inversed MgO: LiNbO3 (36th International Microprocesses and Nanotechnology Conference (MNC 2023))
4.	2023/09/20	Remote charge modulation effect of monolayer MoS2 using periodically polarization-inverted structure and hBN spacer layer (JSPA-OSA jyoint symposia 2023)
5.	2023/06/29	Mist CVD Atomic Few-Layer 2D Transition Metal-Dichalcogenides: MoS2,WS2 and WS2Se2-x for Electronic and Photovoltaic Devices (2D Transition metal dichalcogenides)
6.	2023/06/27	Few-Layer MoS2 and WS0.3Se1.7 on AIN and AlTiO/P+-Si for Energy Device Applications (Graphene 2023)
7.	2023/06/05	Modulation of carrier density of 1L-MoS2 using periodically polarization-inversed structure (The 23th International Conference on the Science and Applications of Nanotubes and Low-Dimensional Materials (NT23))
8.	2022/03/09	Growth of Ultra-Thin GaN/AlN Superlattice Structure toward Deep-UV Emission (14th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials/15th International Conference on Plasma-Nano Technology & Science (ISPlasma 2022/IC-PLANTS 2022))
9.	2022/03/08	Microstructural Characterization of Nitride Semiconductor Films Grown on ScAlMgO4 Substrate by RF-MBE (14th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials/15th International Conference on Plasma-Nano Technology & Science (ISPlasma 2022/IC-PLANTS 2022))
10.	2021/10/13	Surface Potential of MoS2 Depending on the Polarity of GaN Substrate Measured by Kelvin Probe Force Microscope (The 12th Recent Progress in Graphene and Two-dimensional Materials Research Conference (RPGR 2021))
11.	2019/12/02	Photoluminescence Quenching of Monolayer Transition Metal Dichalcogenides on GaN Surface (International Symposium on Hybrid Quantum Systems (HQS 2019))
12.	2019/10/10	Effect of In Adlayer on MBE Growth of InN by DERI Method (38th Electronic Materials Symposium)
13.	2019/10/08	Van der Waals Epitaxy of GaN on Graphene by ECR-MBE (Recent Progress in Graphene & 2D Materials Research (RPGR 2019) 2019/10/08)
14.	2019/10/07	Photoluminescence of Transition Metal Dichalcogenides Depending on the Surface Polarity of GaN Support Substrate (Recent Progress in Graphene & 2D Materials Research (RPGR 2019))
15.	2019/09/11	Emerging intrinsic physical properties of nanotubes ~Introduction~ (日本物理学会2019年秋季大会)
16.	2019/07/29	Photoluminescence Properties of MoS2/GaN Hetero-structure (ICCGE(International Conference on crystal growth and epitaxy) 19)
17.	2019/07/29	Effect of In Adlayer on MBE Growth of InN by DERI Method (19th International Conference on Crystal Growth and Epitaxy (ICCGE))
18.	2019/07/09	RF-MBE InN Growth on High-Quality AlN Template (The 13th International Conference on Nitride Semiconductors (ICNS-13))
19.	2019/07/09	Remote homoepitaxy of GaN on graphene using RF-MBE (ICNS (International conference on nitride semicondoctors) 13)
20.	2019/04/24	Polarity Dependent Photoluminescence of GaN/MoS2 Hetero Structure (The 7th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA'19))
21.	2019/04/24	Metal -Covered van der Waals Epitaxy of GaN on Graphitic Substrates by ECR-MBE (The 7th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA'19))
22.	2019/04/24	Indium Nitride Growth with in situ Surface Modification by RF-MBE (The 7th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA '19))
23.	2019/01/07	Fabrication of nitrides/2D material heterostructure and their fundamental optical properties (International Workshop on Hybrid Quantum Systems)
24.	2018/11/13	Characterization of Electrical Properties of InN Epilayer using Terahertz Time-Domain Spectroscopic Ellipsometry (International Workshop on Nitride Semiconductors (IWN 2018))
25.	2018/11/12	Metal Covered Van Der Waals Wpitaxy of GaN Thin Film on Graphene (International Workshop on Nitride Semiconductors (IWN 2018))
26.	2018/11/12	Luminescence Enhancement in InN Deposited by Van der Waals Epitaxy on Graphene Interlayer (International Workshop on Nitride Semiconductors (IWN 2018))
27.	2018/09/04	Van der Waals Epitaxy of Nitride Semiconductors Towards Energy Conversion Devices (The 9th International Symposium of Advanced Energy Science - Interplay for Zero-Emission Energy-)
28.	2018/09/04	Recent Progress and Challenges of InN and In-rich InGaN by RF-MBE using DERI Process (The 20th International Conference on Molecular Beam Epitaxy (ICMBE 2018))
29.	2018/09/04	Development of Innovative Solar Cell based on the Nitride Semiconductor and Layered Materials (The 9th International Symposium of Advanced Energy Science - Interplay for Zero-Emission Energy-)
30.	2018/08/09	Nitrogen Plasma Effects on MBE Growth of GaN on Graphitic Substrate (The 7th International Symposium on Growth of Ⅲ-nitrides)
31.	2018/08/07	Effects of Nitrogen Radical Irradiation on InN Growth by RF-MBE (The 7th International Symposium on Growth of Ⅲ-nitrides)
32.	2018/03/05	Epitaxial InN Growth with in situ Surface Reformation by Radical Beam Irradiation (10th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials/11th International Conference on Plasma-Nano Technology & Science (ISPlasma 2018/IC-PLANTS 2018))
33.	2018/03/04	Growth of InN and In-rich InGaN by RF-MBE　-Present Status and Challenges- (10th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials/11th International Conference on Plasma-Nano Technology & Science (ISPlasma 2018/IC-PLANTS 2018))
34.	2017/12/12	Thermal Transport Properties of MoS2/MoSe2 Hetero Structure Evaluated by Raman Spectroscopy (The Third International Conference on 2D Materials and Technology)
35.	2017/11/27	Reduction of Threading Dislocation Density in InN Film Grown with In Situ Surface Reformation by Radio-Frequency Plasma Excited Molecular Beam Epitaxy (2017 MRS Fall meeting)
36.	2017/11/10	Threding dislocations behaviour in InN films regrown on N radical irradiated InN template (36th. Electronic Materials Symposium)
37.	2017/11/10	Influence of nitrigen radical beam irradiation on MBE growth of InN (36th. Electronic Materials Symposium)
38.	2017/11/10	Epitaxial growth of transferable indium nitride on graphene (36th. Electronic Materials Symposium)
39.	2017/11/10	Characterization of electronic properties of InN epilayer using THz elipsometry (36th. Electronic Materials Symposium)
40.	2017/09/25	Influence of Nitrogen Radical Beam Irradiation on MBE Growth of InN (The 8th Asia-Pacific Workshop on Widegap Semiconductors)
41.	2017/09/07	Dislocation Reduction in InN Film Grown with in Situ Surface Reformation by Radical Beam Irradiation
42.	2017/07/31	Threading Dislocation Behavior in InN Grown with In-situ Surface Reformation by Radical Beam Irradiation (29th International Conference on Defects in Semiconductors)
43.	2017/07/23	RF-MBE Growth of Indium Nitride on Graphene Substrate (12th International Conference on Nitride Semiconductors)
44.	2017/03/17	The Growth of InN on Graphite Substrate by RF-MBE (The 64th JSAP spring meeting)
45.	2017/03/14	TEM Study of InN Films Grown with In-situ Surface Reformation by Radical Beam Irradiation (The 64th JSAP spring meeting)
46.	2017/03/14	Effect of In-situ Surface Reformation by N Radical Beam Irradiation on InN Growth (The 64th JSAP spring meeting)
47.	2017/03/14	Growth of N-polar InN on Sapphire by DERI Method (The 64th JSAP spring meeting)
48.	2016/11/28	Modulation of Photoluminescence Properties in 1L-MoS2/1L-MoSe2 van der Waals Hetero-structure (MRS fall meeting 2016)
49.	2016/09/13	Modulation of Optical Properties of Monolayer MoSe2-MoS2 Hetero-Structures (JSAP-OSA Joint symposia 2016)
50.	2016/09	Polarization-resolved photoluminescence spectroscopy on monolayer transition metal dichalcogenides under electrostatic gating (第51回フラーレン・ナノチューブ・グラフェン総合シンポジウム)
51.	2016/07/06	Field Effect Modulation of Interlayer Exciton Photoluminescence in 1L-MoS2/1L-MoSe2 van der Waals Hetero-structure (The 35th Electronic Materials Symposium)
52.	2016/03	Studies of low temperature photoluminescence spectra and excitonic valley polarization in monolayer MoTe2 APS (spring meeting 2016)
53.	2016/02	Photoluminescence Quantum Yield and Exciton radiative Lifetimes in Monolayer WSe2 (第50回フラーレン・ナノチューブ・グラフェン総合シンポジウム)
54.	2016/02	Anisotropic optical properties of layered monochalcogenide GeSe nanosheets (第50回フラーレン・ナノチューブ・グラフェン総合シンポジウム)
55.	2016/01	Photoluminescence Properties of van der Waals Hetero Structure Composed of Monolayer MoSe2 and MoS2 (2nd International Conference on 2D layered materials)
56.	2015/09	Photoluminescence Properties in Monolayer MoSe2-MoS2 Hetero-Structures (JSAP-OSA Joint Symposia)
57.	2015/09	Bound exciton emission in photoluminescence spectrum of Monolayer WSe2 (第49回フラーレン・ナノチューブ・グラフェン総合シンポジウム)
58.	2015/06	Optical Properties of van der Waals Hetero-Structures Composed of Transition Metel Dichalcogenides (16th International Conference on the Science and Application of Nanotubes)
59.	2015/06	Exciton Many-body Effects in Transition Metal Dichalcogenides (GSS 15 (Sixth Graphene and 2D Materials Satellite Symposium))
60.	2015/03	Spectroscopic studies of single layer molybdenum ditelluride (第48回フラーレン・ナノチューブ・グラフェン総合シンポジウム)
61.	2014/10	Modulation of PhotoluminescenceProperties of Monolayer MoS2 via Chemical (1st International Conference on 2D layered materials)
62.	2014/09	Study the valley polarization in monolayer WSe2 by polarization-resolved photoluminescence spectroscopy
63.	2014/09	Modulation of Photoluminescence Properties of Monolayer Transition Metal Dichalcogenides via Chemical Doping (JSAP-OSA Joint Symposia)
64.	2012/06	Exciton Dynamics in Hole-doped Single-walled Carbon Nanotubes (13th International Conference on the Science and Application of Nanotubes)
65.	2010/06	Single molecule spectroscopy of carbon nanotubes grown on a tapered optical fiber (International Conference on Physics of Semiconductor)
66.	2007/11	Relaxation path from the photo-induced state of the two coupled sub-lattice Ising-like system (3rd International conference on ‘PHOTO-INDUCED PHASE TRANSITIONS')
67.	2007/03	Relaxation process in the binuclear spin-crossover complex (4th Japan-France Symposium on Molecular Materials)
68.	2006/05	Relaxation from photo-induced states in the binuclear spin-crossover complex [Fe(bt)(NCS)2] 2(bpym) (Phase transition and Dynamical properties of Spin Transition Materials 2006)
69.	2006/04	Photo-excitation and relaxation dynamics in the binuclear spin-crossover [Fe(bt)(NCS)2]2(bpym) (06 de la division de Chimie de Coordination de la Societé française de Chimie)
70.	2006/03	Relaxation dynamics of photo-induced state in the binuclear spin-crossover [Fe(bt)(NCS)2]2(bpym) (International symposium on Molecular Materials based on Coordination and Organometalic chemistry)
71.	2005/05	Photo-Induced Phase transition dynamics in the binuclear spin-crossover [Fe(bt)(NCS)2]2(bpym) by IR absorption spectroscopy (2nd International conference on ‘PHOTO-INDUCED PHASE TRANSITIONS')