研究者学術情報データベース

アオヤギ　ヨシノブ
青柳　克信
AOYAGI Yoshinobu

所属総合科学技術研究機構

職名上席研究員

論文
1.	2013	A 2-inch, large-size deep ultraviolet light-emitting device using dynamically controlled micro-plasma-excited AlGaN │ Applied Physics Letters │ 102 (4),041114-1-041114-3
2.	2012/08	Control of neural signal propagation in neuron by three therminal electrodes method │ Elec. Letters │ 48 (18),1093-1095
3.	2012/08	High-sensitivity ozone sensing using 280nm deep ultraviolet light-emitting diode for depletion of natural hazard ozone │ Journal of Environmental Protection │ 3 (8),695-699
4.	2012	Formation of AlGaN and GaN epitxial layer with high p-carrier concentration by pulse supply of source │ AIP Advances │ 2,0012177-0012183
5.	2011	High hole carrier concentration realized by alternative co-doping technique in metal organic chemical vapor deposition │ Appl. Phys. Letters │ 99 (11),112110
6.	2011	Inactivation of bacterial viruses in waterusing deep ultraviolet semiconductor light-emitting diode │ J.Environmental Engineering │ 137 (12),1215-1218
7.	2010	Anisotropic transport in graphene on SiC substrate with periodic nanofacets │ Appl. Phys. Letters │ 96,062111-1--062111-3
8.	2009	AlGaN channel HEMT's on AlN buffer layer with sufficiently low off-state drain leakage current │ Electron. Letters │ 45,1349
9.	2009	AlN/AlGaN short-period super-lattice sacrificial layers in laser lift-off for vertical-type AlGaN-Base deep ultraviolet light emitting diodes │ Appl. Phys. Letters │ 94,061117-1-061117-3
10.	2009	Surface selective deposition of molecular semiconductors for solution-based integration of organic field-effect transistors, │ Applied Physics Letters │ 94 (9),093307-1-093307-3
11.	2008/02	Direct determination of photonic band structure for waveguiding modes in two-dimensional photonic crystals │ OPTICS EXPRESS │ 16 (4),2461-2468
12.	2008	Bias stress instability in pentacene thin film transistors: contact resistance chargeand channel threshod voltage shift │ Appl. Phys. Letters │ 94,063305-1-063305-3
13.	2008	Charage trapping induced current instability in pentacene thin film transistors: Trapping barrier and effect of surface treatment │ Appl. Phys. Letters │ 93,033304-1-033304-3
14.	2008	Correlation between grain size and device parameters in pentacene thin film transistors │ Appl. Phys. Letters │ 93,043311-1-043311-3
15.	2008	Coulomb blockade oscillations in patterned ultrathin craphite films │ Jpn. J. Appl. Phys. │ 47 (1),697-699
16.	2008	Excitation-density dependence of photoluminescence from Si-doped AlGaN/AlGaN multiple quantum wells at low temperature │ Jpn. J. Appl. Phys. │ 47 (1),47-50
17.	2008	First Operation of AlGaN Channel High Electron Mobility Transistors │ Appl. Phys. Express │ 1,011101-1-011101-3
18.	2008	Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors │ Appl. Phys. Letters │ 92,263502-1-263502-3
19.	2008	Selective organization of solution-processed organic field-effect transistors │ Appl. Phys. Letters │ 92,173301-1-173301-3
20.	2007	Improvement of crystalline quality of N-polar AlN layers on c-plane sapphire by low-pressure flow-modulated MOCVD │ J. Crystal Growth │ 298,336-340
21.	2007	Quantum response of carbon nanotube quantum dots to terahertz wave irradiation │ Nanotechnology │ 18,044001-1-044001-4
22.	2007	Quasi-periodic coulomb blockade oscilations in a single-wall carbon nanotube bundle │ Solid State Phenom. │ 121,537-540
23.	2006	Charge transport of copper phthalocyanine single-crystal field-effect transistors stable above 100 degree C │ Appl. Phys. Lett. │ 88,122110-1-122110-3
24.	2006	Contact resistance modulation in carbon nanotube devices investigated by four-probe experiments │ Appl. Phys. Lett. │ 88,053118-1-053118-3
25.	2006	Direct nanoimprint of inorganic-organic hybrid glass │ J. Vac. Sci. Technol. B │ 24,1402-1404
26.	2006	Fabrication of GaN-based striped structures along the <1120> direction by the combination of RIE dry-etching and KOH wet-etching techniques to recover dry-etching damage │ Phys. Stat. Sol. (c) │ 3,1624-1628
27.	2006	Fabrication of GaN-based striped strucutres along the <1120> direction by the combination of RIE dry-etching and KOH wet-etching techniques to recover dry-etching damage │ Phys. Stat. Sol.(c) │ 3,1624-1628
28.	2006	Gate capacitance in electrochemical transistor of single-walled carbon nanotube │ Appl. Phys. Lett. │ 88,073104-1-073104-3
29.	2006	High-density electrostatic carrier doping in organic single-crystal transistors with polymer gel electrolyte │ Appl. Phys. Lett. │ 88,112102-1112102-3
30.	2006	High-performance transparent flexible transistors using carbon nanotube films │ Appl. Phys. Lett. │ 88,033511-1-033511-3
31.	2006	Interface modification of a pentacene field-effect transistor with a submicron channel │ Appl. Phys. Lett. │ 89,113507-1-113507-3
32.	2006	Investigation of defects in GaN with varying Mg doping concentrations │ Phys. Stat. Sol.(c) │ 6,1775-1778
33.	2006	Nano-scale interface controls for future plastic transistors │ Sci. Technol. Adv. Mater. │ 7,231-236
34.	2006	Nonlinear optical polymer patterned by nanoimprint lithography as a photonic crystal waveguide structure │ J. Vac. Sci. Technol. B │ 24,271-273
35.	2006	Organic light-emitting diode driven by organic thin film transistor on plastic substrates │ J. Appl. Phys. │ 99,064506-1-064506-5
36.	2006	Reproducible formation of nanoscale-gap electrodes for single-molecule measurements by combination of FIB deposition and tunneling current detection │ Microelectron. Eng. │ 83,1471-1473
37.	2006	Straight and Smooth Etching of GaN (1-100) Plane by Combination of Reactive Ion Etching and KOH Wet Etching Techniques │ Jpn. J. Appl. Phys. │ 45,3988-3991
38.	2006	Straight and smooth etching of GaN (1100) plane by combination of reactive ion etching and KOH wet etching techiniques │ Jpn. J. Appl. Phys. Pt.1 │ 45,3988-3991
39.	2006	TEM analysis of an interface layer formed by the anti-surfactant treatment on a GaN template │ J. Crystal Growth │ 298,285-287
40.	2006	TEM analysis of annihilation process of threading dislocations in GaN thin films grown by MOVPE with anti-surfactant treatment │ Physica Status Solidi (c) │ 3,1832-1835
41.	2006	TEM analysis of annihilation process of threading dislocations in GaN thin films grown by MOVPE with anti-surfactant treatment │ Phys. Stat. Sol.(c) │ 3,1832-1835
42.	2006	Ultraviolet second-harmonic generation and sum-frequency mixing in two-dimensional nonlinear optical polymer photonic crystals │ Jpn. J. Appl. Phys. Pt.1 │ 45,6103-6107
43.	2006	Vertical AlGaN deep ultraviolet light emitting diode emitting at 322 nm fabricated by the laser lift-off technique │ Appl. Phys. Lett. │ 89,261114-1-261114-3
44.	2006	ナノスケール物質電気伝導探索のためのナノギャップ電極作製と応用 │ 応用物理 │ 75 (3),332--337
45.	2006	深紫外窒化物系発光デバイス │ 光学 │ 35 (5),246--253
46.	2005	Alignment-Free Top-Contact Formation for Organic Thin Film Transistors with Submicron-Length Channel │ Jpn. J. Appl. Phys. Pt.2 │ 44,L479- L481
47.	2005	Carbon nanotube quantum dots fabricated on a GaAs/AlGaAs two-dimensional electron gas substrate │ J. Appl. Phys. │ 98,076106-1-076106-3
48.	2005	Characterization and estimation of tunnel barrier height in metallic single-wall carbon nanotube quantum dots │ Microelectron. Eng. │ 82,196-200
49.	2005	Control of Carrier Density by a Solution Method in Carbon-Nanotube Devices │ Adv. Mater. │ 17,2430-2434
50.	2005	Current distribution inside Py/Cu lateral spin-valve devices │ Phys. Rev. B │ 71,094402-1-094402-10
51.	2005	Design and fabrication of two-dimensional photonic crystals with predetermined nonlinear optical properties │ Phys. Rev. Lett. │ 94,109304-1-109304-4
52.	2005	Effect of probe configuration on spin accumulation in lateral spin-valve structure │ J. Magn. Magn. Mater. │ 286,88-90
53.	2005	Excitation spectroscopy of two-electron shell structures in carbon nanotube quantum dots in magnetic fields │ Appl. Phys. Lett. │ 87,073103-1-073103-3
54.	2005	Exclucive-OR gate using a two-input single-electron transistor in single-wall carbon nanotubes │ Appl. Phys. Lett. │ 87,153101-1-153101-3
55.	2005	Fabrication of a single-electron inverter in single-wall carbon nanotubes │ Jpn. J. Appl. Phys. Pt.1 │ 44,1588-1591
56.	2005	Four-electron shell structures and an interacting two-electron system in carbon-nanotube quantum dots │ Phys. Rev. Lett. │ 94,186806-1-186806-4
57.	2005	Hall effect of quasi-hole gas in organic single-crystal transistors │ Jpn. J. Appl. Phys. Pt.2 │ 44,L1393-L1396
58.	2005	Importance of electron-electron interactions and Zeeman splitting in single-wall carbon nanotube quantum dots │ Physica E. │ 26,473-476
59.	2005	Modification of the electric conduction at the pentacene/SiO2 interface by surface termination of SiO2 │ Appl. Phys. Lett. │ 86,103502-1-103502-3
60.	2005	Pentacene transistor encapsulated by poly-para-xylylene behaving as gate dielectric insulator and passivation film │ Appl. Phys. Lett. │ 87,183502-1-183502-3
61.	2005	Proximity effect in a superconductor-metallofullerene-superconductor molecular junction │ Phys. Rev. B │ 72,033414-1-033414-4
62.	2005	Quantum dots and their tunnel barrier in semiconducting single-wall carbon nanotubes with a p-type behavior │ Jpn. J. Appl. Phys. │ 44,2596-2599
63.	2005	Suppression of the unconventional metallic behavior by gate voltage in MWNT device │ Physica E │ 29,698-701
64.	2005	ナノカーボン材料伝導研究のための架橋型ナノ電極作製と応用 │ 顕微鏡 │ 40 (2),96--99
65.	2005	ナノカーボン材料伝導研究のための架橋型ナノ電極作製と応用 │ 顕微鏡 │ 40,96-99
66.	2004	Carbon nanotubes as a building block of quantum dot devices │ Physica E │ 24,10-13
67.	2004	Carbon nanotubes with a nanogap for nanoscale organic devices │ Microelectron. Eng. │ 65,675-678
68.	2004	Direct observation of contact and channel resistance in pentacene four-terminal thin-film transistor patterned by laser ablation method │ Appl. Phys. Lett. │ 84,813-815
69.	2004	Domain wall drag due to dc current injection into ferromagnetic nano-wires │ J. Magn. Magn. Mater. │ 0,e1347-e1348
70.	2004	Electrical transport in semiconducting single-wall carbon nanotubes │ Physica E │ 24,46-49
71.	2004	Enhanced photoluminescence of InGaAs quantum dots induced by nanoprobe identation │ Physica E │ 21,265-269
72.	2004	Enhancement of nonlocal spin-valve signal using spin accumulation in local spin-valve configuration │ Appl. Phys. Lett. │ 85,5382-5384
73.	2004	Fabrication of Coulomb blockade device utilizing the 0.34 nm interlayer spacing in a multiwalled carbon nanotube │ Microelectron. Eng. │ 0,666-669
74.	2004	Gate-induced crossover from unconventional metals to Fermi liquids in multiwalled carbon nanotubes │ Appl. Phys. Lett. │ 85,6404-6406
75.	2004	Gate-voltage dependence of zero-bias anomalies in multiwall carbon nanotubes │ Phys. Rev. Lett. │ 92,036801-1-036801-4
76.	2004	Growth and annealing conditions of high Al content p-type AlGaN for deep UV-LEDs │ Phys. Status Solidi A │ 201,2803-2807
77.	2004	Growth control of pentacene films on SiO2/Si substrates towards formation of flat conduction layers │ Thin Solid Films │ 467,168-171
78.	2004	High-efficiency 352nm Quaternary InAlGaN-based Ultraviolet Light-emitting Diodes Grown on GaN Substrates │ Phys. Status Solidi A │ 201,2803-2807
79.	2004	InAlGaN4元混晶を用いた紫外LEDの短波長化と高効率化 │ 32,402-409
80.	2004	Multiple layers conduction and scattering property in multi-walled carbon nanotubes │ New J. Phys. │ ,1-13
81.	2004	Nanofabrication of cylindrical STEM specimen of InGaAs/GaAs quantum dots for 3D-STEM observation │ Ultramicroscopy │ 101,55-61
82.	2004	Non-local Hall resistance measured in submicron-scale non-magnetic/ferromagnetic junctions │ J. Magn. Magn. Mater. │ 0,e1333-e1334
83.	2004	Observation of discrete quantum levels in multi-wall carbon nanotube quantum dots │ Physica E │ 24,50-54
84.	2004	Optical probing of spin polarization of electrons in quantum dot edge channels │ Phys. Rev. Lett. │ 93,096803-1-096803-4
85.	2004	Pentacene nanotransistor with carbon nanotube electrodes │ Appl. Phys. Lett. │ 85,1021-1023
86.	2004	Photonic band structure and related properties of photonic crystal waveguides in nonlinear optical polymers with metallic cladding │ Phys. Rev. B │ 69,205109-1-205109-6
87.	2004	Spin-dependent boundary resistance in the lateral spin-valve structure │ Appl. Phys. Lett. │ 85,3501-3503
88.	2004	Suppression of spin accumulation in nonmagnet due to ferromagnetic ohmic contact │ Appl. Phys. Lett. │ 85,3795-3796
89.	2004	Surprisingly low built-in electric fields in quaternary AlInGaN heterostructures │ Phys. Status Solidi A │ 201,190-194
90.	2004	The formation of nanometer-scale gaps by electrical degradation and their application to C60 transport measurements │ Microelectron. Eng. │ 0,686-688
91.	2004	ナノテクノロジーと深紫外発光素子の開発 │ 固体物理 │ 39,265--278
92.	2003	Analysis of surface modifications on graphite induced by slow highly charged ion impact │ Nucl. Instrum. Methods Phys. Res. B │ 205,736-740
93.	2003	Catalytic growth of carbon nanotubes and their patterning based on ink-jet and lithographic techniques │ J. Electroanal. Chem. │ 559,25-30
94.	2003	Coulomb blockade oscillation in a multiwalled carbon nanotube with internanotube tunnel junctions │ Appl. Phys. Lett. │ 83,1429-1431
95.	2003	Density of states of a quantum dot array probed by photoluminescence spectra │ Surf. Sci. │ 529,171-179
96.	2003	Determination of built-in electric fields in quaternary InAlGaN heterostructures │ Appl. Phys. Lett. │ 82,1541-1543
97.	2003	Effect of the large current flow on the low-temperature transport properties in a bundle of single-wall carbon nanotubes │ Appl. Phys. Lett. │ 83,3803-3805
98.	2003	Enhanced photoluminescence of InGaAs/GaAs quantum dots induced by nanoprobe pressure effects │ Appl. Phys. Lett. │ 83,2247-2249
99.	2003	Fabrication of a single-electron inverter in multiwall carbon nanotubes │ Appl. Phys. Lett. │ 82,3307-3309
100.	2003	Fabrication of single electron transistors in multi-wall carbon nanotubes by using Ar beam irradiation │ Microelectron. Eng. │ 0,749-754
101.	2003	Facets, indium distribution, and lattice distortion of InGaAs/GaAs quantum dots observed by three-dimensional scanning transmission electron microscope │ J. Appl. Phys. │ 94,313-317
102.	2003	High-yield production of single-wall carbon nanotubes in nitrogen gas │ Chem. Phys. Lett. │ 372,45-50
103.	2003	Local Ar beam irradiation for making tunneling barriers and its application to single electron inverter in multi-wall carbon nanotubes │ Physica E │ 19,157-160
104.	2003	Low temperature transport in single and coupled quantum dots in single-wall carbon nanotubes │ Physica E │ 16,35-41
105.	2003	Microassembly of semiconductor three-dimensional photonic crystals │ Nat. Mater. │ 2,117-121
106.	2003	Modification of highly oriented pyrolytic graphite (HOPG) surfaces with highly charged ion (HCI) irradiatio │ Nucl. Instrum. Methods Phys. Res. B │ 206,202-205
107.	2003	Multi-azimuth 360 degrees observation of quantum nanostructures by scanning transmission electron microscopy │ J. Mater. Sci. Lett. │ 22,273-277
108.	2003	Nanoscale transformation of sp2 to sp3 of graphite by slow highly charged ion irradiation │ Nucl. Instrum. Methods Phys. Res. B │ 209,170-174
109.	2003	Near-field optical mapping of exciton wave functions in a GaAs quantum dot │ Phys. Rev. Lett. │ 91,177401-1-177401-4
110.	2003	Real-space mapping of exciton wave function in a GaAs quantum dot by near-field optical imaging spectroscopy │ Phys. Status Solidi B │ 238,285-288
111.	2003	Selective X-ray absorption spectroscopy of self-assembled atom in InAs quantum dot │ Microelectron. Eng. │ 64,955-962
112.	2003	Spin-current-assisted domain-wall depinning in a submicron magnetic wire │ J. Appl. Phys. │ 94,7947-7949
113.	2003	Superconducting SET with tunable electromagnetic environment │ Physica E │ 18,25-26
114.	2003	Suppressed pinning field of a trapped domain wall due to direct current injection │ J. Appl. Phys. │ 94,7266-7269
115.	2003	Two-electron and four-electron periodicity in single-wall carbon nanotube quantum dots │ Superlattices Microstruct. │ 34,377-382
116.	2003	埋め込み量子ドット界面のサイト選択的X線吸収測定 │ 52,1405-1409
117.	2002	A drastic change of the effective g-value in nanostructure system: Zeeman attenuator │ Physica B │ 314,235-238
118.	2002	Can Kondo-loke behavior occur in open quantum dots? │ Microelectron. Eng. │ 63,277-286
119.	2002	Carbon nanotube devices for nanoelectronics │ Physica B │ 323,107-114
120.	2002	Charge transfer control by gate voltage in crossed nanotube junction │ Appl. Phys. Lett. │ 81,2250-2252
121.	2002	Classical microwave response of coupled quantum dots in single-wall carbon nanotubes │ Appl. Phys. Lett. │ 80,4238-4240
122.	2002	Effect of thermal annealing on the Pd/Au contact to P-type Al0.15Ga0.85N │ Jpn. J. Appl. Phys. Pt.1 │ 41,581-582
123.	2002	Effect of thermal annealing on the Pd/Au contact to P-type Al0.15Ga0.85N │ Jpn. J. Appl. Phys. │ 41,581-582
124.	2002	Efficient 230-280nm emission from high-Al-content Al-GaN-based multiquantum wells │ Appl. Phys. Lett. │ 80,37-39
125.	2002	Efficient 230-280nm emission from high-Al-content AlGaN-based multiquantum wells │ Appl. Phys. Lett. │ 80,37-39
126.	2002	Fabrication of a low-threading-dislocation-density AlxGa1-xN buffer on SiC using highly Si-doped AlxGa1-xN superlattices │ Appl. Phys. Lett. │ 80,2057-2059
127.	2002	Fabrication of a low-threading-dislocation-density AlxGa1-xN buffer on SiC using highly Si-doped AlxGa1-xN superlattices │ Appl. Phys. Lett. │ 80,2057-2059
128.	2002	Fabrication of p-n junction with Mg-doped wide bandgap InAlGaN for application to UV emitters │ Mat. Res. Soc. Symp. Proc. │ 693,I4.10.1
129.	2002	Formation of GaN nanopillars by selective area growth using ammonia gas source molecular beam epitaxy │ J. Cryst. Growth │ 243,129-133
130.	2002	Growth of AlN-SiC solid solutions by sequential supply epitaxy │ J. Crystal Growth │ 234,435-439
131.	2002	Influence of interdot coupling on electron-wave interference in an open quantum-dot molecule │ Appl. Phys. Lett. │ 80,2970-2972
132.	2002	Influence of interdot coupling on electron-wave interference in an open quantum-dot molecule │ Appl. Phys. Lett. │ 80,2970-2972
133.	2002	Interaction of electromagnetic wave with quantum dots │ Physica B │ 314,437-443
134.	2002	Low temperature conductance fluctuations in double-dot system │ Microelectron. Eng. │ 63,57-61
135.	2002	Magnetic field dependence of Coulomb oscillations in metal/multi-wall carbon nanotube/metal structures │ Physica B │ 323,246-248
136.	2002	Marked enhancement of 320-360nm ultraviolet emission in quaternary InxAlyGa1-x-yN with In-segregation effect │ Appl. Phys. Lett. │ 80,207-209
137.	2002	Marked enhancement of 320-360nm ultraviolet emission in quaternary InxAyGa1-x-yN with In-segregation effect │ Appl. Phys. Lett. │ 80,207-209
138.	2002	Near-field photoluminescence imaging of single semiconductor quantum constituents with a spatial resolution of 30 nm │ Appl. Phys. Lett. │ 81,2291-2293
139.	2002	Near-field scanning optical microscopy of quantum dot arrays │ Jpn. J. Appl. Phys. Pt.1 │ 41,2668-2670
140.	2002	Non-weak-localization signature in the average conductance of open quantum-dot arrays │ Physica E │ 12,630-633
141.	2002	Non-weak-localization signature in the average conductance of open quantum-dot arrays │ Physica E │ 12,630-633
142.	2002	Numerical simulations of magneto transport in dot array systems at high magnetic fields │ Microelectron. Eng. │ 63,91-95
143.	2002	Resistance dependence of transport properties in metal-multiwall carbon nanotube-metal structures │ Microelectron. Eng. │ 63,33-37
144.	2002	Room-temperature intense 320nm band ultraviolet emission from quaternary InAlGaN-based multiple-quantum wells │ Appl. Phys. Lett. │ 80,1589-1591
145.	2002	Room-temperature intense 320nm band ultraviolet emission from quaternary InAlGaN-based multiple-quantum wells │ Appl. Phys. Lett. │ 80,1589-1591
146.	2002	Single and coupled quantum dots in single-wall carbon nanotubes │ Superlattices Microstruct. │ 31,141-149
147.	2002	Small built-in electric fields in quaternary InAlGaN heterostructures │ Phys. Status Solidi B │ 234,764-768
148.	2002	The dependence of fractal conductance fluctuations on semiconductor billiard parameters │ Physica B │ 314,477-480
149.	2002	Three-dimensional photonic crystals for optical wavelengths assembled by micromanipulation │ Appl. Phys. Lett │ 81,3122-3124
150.	2002	Tunnel barrier formation using argon-ion irradiation and single quantum dots in multiwall carbon nanotubes │ Appl. Phys. Lett. │ 81,2273-2275
151.	2001	Beating of Shubnikov-de Haas oscillations in GaAs/AlGaAs quantum-dot arrays │ Jpn. J. Appl. Phys. │ 40,1990-1993
152.	2001	Confinement-induced enhancement of electron-electron interactions in open quantum-dot arrays │ Phys. Rev. B │ 63,241302-1-241302-4
153.	2001	Coulomb blockade in multiwalled carbon nanotube island with nanotube leads │ Appl. Phys. Lett. │ 79,1465-1467
154.	2001	Coupling-driven transition from multiple to single-dot interference in open quantum-dot arrays │ Phys. Rev. B │ 64,085325-1-085325-7
155.	2001	Creation of nanodiamonds by the single impacts of highly charged ions upon graphite │ Appl. Phys. Lett. │ 79,3866-3868
156.	2001	Current injection UV-emission from InAlGaN multi-quantum-well light emitting diodes │ MRS GaN and Related Alloys-2000 │ 639,G 12.6
157.	2001	Design of an ultrahigh-gain Ni-like Kr soft X-ray laser by use of an optical-field-induced ionization-initiated transient collisional excitation scheme │ Jpn. J. Appl. Phys. │ 40,153-158
158.	2001	Electron transport in metal/multiwall carbon nanotube/metal structures (metal=Ti or Pt/Au) │ Appl. Phys. Lett. │ 79,1354-1356
159.	2001	Electronic structure of Ag-induced √3 x √3 and √21 x √21 superstructures on the Si(111) surface studied by angle-resolved photoemission spectroscopy and scanning tunneling microscopy │ Phys. Rev. B │ 64,205316-1-205316-4
160.	2001	Fabrication of single and coupled quantum dots in single-wall carbon nanotubes │ J. Vac. Sci. Technol.B │ 19,2770-2774
161.	2001	Fermi-edge singularities in photoluminescence spectra of n-type modulation-doped quantum wells with a lateral periodic potential │ Phys. Rev. B │ 63,165330-1-165330-6
162.	2001	Formation of coupled quantum dots in single-wall carbon nanotubes │ Appl. Phys. Lett. │ 79,1864-1866
163.	2001	GaN ablation etching by simultaneous irradiation with F2 laser and KrF excimer laser │ J. Vac. Sci. Technol. B │ 19,1388-1391
164.	2001	GaN ablation etching by simultaneous irradiation with F2 laser and KrF excimer laser │ J. Vac. Sci. Technol. B │ 19,1388-1391
165.	2001	GaN quantum dot formation by self-assembling droplet epitaxy and application to single-electron transistors │ Appl. Phys. Lett. │ 79,2243-2245
166.	2001	Growth and optical properties of quarternary InAlGaN for 300nm-band UV-emitting devices │ Phys. Status Solidi A │ 188,83-89
167.	2001	InAlGaN 4元混晶を用いた330-350nm帯高効率紫外LED │ 信学技報 │ ED2001-134 (CPM 2001-87),49-55
168.	2001	Magneto-conductance oscillations in open dot arrays │ Phys. Status Solidi B │ 224,711-714
169.	2001	Nanoscale modification of electronic state of graphite by highly charged Ar-ion irradiation │ J. Vac. Sci. Technol. B │ 19,2745-2748
170.	2001	Nucleation and growth kinetics of AlN films on atomically smooth 6H-SiC(0001) surfaces │ Appl. Phys. Lett. │ 78,3612-3614
171.	2001	Observation of Coulomb blockade in a Ti/multiwall carbon nanotube/Ti structure │ Nanonetwork Materials │ ,265-278
172.	2001	Photoluminescence of InGaAs (P) dots with quasi-zero-dimensional confinement │ Mater. Sci. Eng. B │ 86,34-40
173.	2001	Pressure effects on nanoprobe photoluminescence of quasi-zero-dimensional confinement quantum dot │ Superlattices Microstruct. │ 30,169-179
174.	2001	Quantum dot formation and crystal growth using an atomic nano-mask │ Physica E │ 11,89-93
175.	2001	Quantum dot formation in single-wall carbon nanotubes │ Jpn. J. Appl. Phys. │ 40,1915-1917
176.	2001	Resonant raman scattering on self-assembled GaN quantum dots │ Appl. Phys. Lett. │ 78,987-989
177.	2001	Signature of discrete level spectrum in temperature-dependent transport through open quantum-dot arrays │ Phys. Rev. B │ 64,193302-1-193302-4
178.	2001	Single-electron charging in a parallel dot structure │ Appl. Phys. Lett. │ 78,634-636
179.	2001	X-ray excited optical luminescence of impurity atom in semiconductor │ J. Synchrotron Rad. │ 8,372-374
180.	2001	X-ray-excited optical luminescence of erbium-doped semiconductor: Site selective X-ray absorption spectroscopy of an optically active atom │ J. Electron Spectrosc. Relat. Phenom. │ 114・116,521-525
181.	2000	230-250 nm intense emission from AIN/AlGaN quantum wells │ Phys. Status Solidi (a) │ 180,157-163
182.	2000	Anti-surfactant in III-nitride epitaxy: Quantum dot formation and dislocation termination │ Jpn. J. Appl. Phys. │ 39,L831-L834
183.	2000	Characterization of SET electrometer coupled to the quantum dot in GaAs/AlGaAs 2DEG │ Microelectron. Eng. │ 47,185-187
184.	2000	Current injection emission at 333nm from Al0.03Ga0.97N/Al0.25Ga 0.75N multi quantum well ultraviolet light emitting diodes │ Phys. Status Solidi (a) │ 180,397-401
185.	2000	Doping-dependent optical gain in GaN │ Appl. Phys. Lett. │ 76,2994-2996
186.	2000	Evidence for a reentrant metal-insulator transition in quantum-dot arrays │ Phys. Rev. B │ 60,16050-16057
187.	2000	F2 laser etching of GaN │ Appl. Surf. Sci. │ 168,335-339
188.	2000	Formation and device application of Er-doped nanocrystalline Si using laser ablation │ Mat. Sci. Eng. B │ 74,197-201
189.	2000	Insulating state in open quantum dots and quantum dot arrays │ Ann. Phys. │ 9,65-68
190.	2000	Investigations of optical and electrical properties of In-doped GaN films by gas-source molecular beam epitaxy │ J. Cryst. Growth │ 209,396-400
191.	2000	Magneto-transport in corrugated quantum wires │ Physica E │ 7,750-755
192.	2000	Metal-insulator transition in quantum dot arrays │ Superlattices Microstruct. │ 27,311-314
193.	2000	Optical properties of GaN quantum dots │ J. Appl. Phys. │ 87,3883-3890
194.	2000	Quantum dots in carbon nanotubes │ Jpn. J. Appl. Phys. │ 39,7053-7057
195.	2000	Room-temperature operation at 333 nm of Al0.03Ga0.97N/Al0.25Ga0.75N quantum-well light-emitting diodew with Mg-doped superlattice layers │ Appl. Phys. Lett. │ 77,175-177
196.	2000	Scanning tunneling microscopy evidence of a special bounding of Cu adatoms on Si(111)- 3 x 3-Ag surface Diect observation of surface-state electron migration │ Surf. Sci. │ 446,L120-L126
197.	2000	Signature of coherent electron transport in open dot arrays │ Nanotechnology │ 11,365-369
198.	2000	Temperature and size dependence of fractal MCF in semiconductor billiards │ Microelec. Eng. │ 51・52,241-247
199.	2000	Temperature dependence of photoluminescence spectrain n-type modulation-doped quantum dot arrays │ Physica E │ 7,466-469
200.	1999	An approach to achieve intense photoluminescence of GaN │ Jpn. J. Appl. Phys. │ 38,L14-L16
201.	1999	Determination of photoluminescence mechanism in InGaN quantum wells │ Appl. Phys. Lett. │ 75,2241-2243
202.	1999	Dynamics of superradiant excitons in GaAs single quantum wells │ J. Lumines. │ 83,309-312
203.	1999	Effect of indium doping on the transient optical properties of GaN films │ Appl. Phys. Lett. │ 75,2879-2881
204.	1999	Energy gap measurement in ultrasmall superconducting rings │ Microelectron. Eng. │ 47,389-391
205.	1999	Fabrication of self-assembling AlGaN quantum dot on AlGaN surfaces using anti-surfactant │ MRS Internet J. Nitride Semicond. Res. SUPPL. │ 1,6d
206.	1999	Fabrication of self-assembling InGaN and AlGaN quantum dot on AlGaN surfaces using anti-surfactant │ Microelectron. Eng. │ 49,287-290
207.	1999	Focused multi-peaks in gated ballistic wires │ Microelectron. Eng. │ 47,155-157
208.	1999	Hot carrier scaling of localization in a quantum dot array │ Physica B │ 272,49-52
209.	1999	Improvements of the optical and electrical properties of GaN films by using In-doping method during growth │ Jpn. J. Appl. Phys. │ 38,L411-L413
210.	1999	In situ control of strain-induced dot structure by arsenic/phosphorus replacement │ J. Electron. Mater. │ 28,437-441
211.	1999	Influence of a piezoelectric field on the electron distribution in a double GaN/Al0.14Ga0.86N heterojunction │ Appl. Phys. Lett. │ 74,3866-3868
212.	1999	Lead-orientation-dependent wave function scarring in open quantum dots │ Phys. Rev. Lett │ 82,4691-4694
213.	1999	Localization effect in mesoscopic quantum dots and quantum-dot arrays │ Phys. Rev. B │ 60,R16299-R16302
214.	1999	Magnetotransport in an InAs/AlGaSb quantum wire with a weak periodic potential │ Physica B │ 272,110-113
215.	1999	Modeling of electron transport in corrugated quantum wires │ Jpn. J. Appl. Phys. │ 38,325-327
216.	1999	Observation of excited level populations of Li-like aluminum ions in recombining plasma: Role of atomic processes involving doubly excited levels of Be-like ions │ J. Phys. B: At. Mol. Opt. Phys. │ 32,553-562
217.	1999	Optical characterization of the "E2" deep level in GaN │ Appl. Phys. Lett. │ 74,543-545
218.	1999	Optical properties of Si-doped AlxGa1-xN/AlyGa1-yN(x=0.24-0.53, y=0.11) multi-quantum structures │ MRS Internet J. Nitride Semicond. Res. SUPPL. │ 1,6d
219.	1999	Phenomenological theory of the Rabi oscillation in coupled quantum dots │ Physica B. │ 272,39-41
220.	1999	Photoluminescence and optical transition dynamics of Er3+ ions in porous Si │ J. Mater. Sci. Technol. │ 15,357-362
221.	1999	Probing the discrete level spectrum of open quantum dots │ Jpn. J. Appl. Phys. │ 38,322-324
222.	1999	Quantum-size effect in model nanocrystalline/amorphous mixed-phase silicon structures │ Phys. Rev. B │ 59,10309-10314
223.	1999	Single electron tunneling devices │ Phys. and Appl. of Mesoscopic Josephson Junctions │ ,305-323
224.	1999	Size-dependent optical nonlinearities in GaN quantum dots │ Solid State Commun. │ 109,377-381
225.	1999	Temperature dependent fractal dimension of magneto-conductance fluctuations in semiconductor billiards │ Superl. Microstr. │ 25,157-163
226.	1999	XANES analysis of optical activation process of Er in Si:Er2O3 thin film: Electronic and structural modifications around Er │ Jpn. J. Appl. Phys. │ 38,191-194
227.	1998	(GaAs)m(GaO)n low dimensional short-period superlattice fabricated by atomic layer epitaxy │ Microelectron. Eng. │ 43,301-307
228.	1998	Ballistic weak localization and wave function scarring in quantum wires │ Jpn. J. Appl. Phys. │ 37,1657-1659
229.	1998	Calculating the density of states and the linear response functions with time-dependent Schrodinger equations │ Microelectron. Eng. │ 43・44,459-470
230.	1998	Calculation of Landau levels in semiconductor quantum dots in a high magnetic field and at a high optical excitation │ Phys. Rev. B │ 58,6744-6747
231.	1998	Chemical beam epitaxy of GaN using triethylgallium and ammonia │ J. Cryst. Growth │ 188,86-91
232.	1998	Electronic structure of nanocrystalline/amorphous silicon: A novel quantum size effect │ Mater.Sci. Eng. B │ 51,146-149
233.	1998	Enhancement of photoluminescence near Fermi level in bias voltage controlled quantum dot arrays │ Solid State Commun. │ 106,815-819
234.	1998	Environmental coupling and phase breaking in open quantum dots │ J. Phys. Condens. Matt. │ 10,L55-L61
235.	1998	Fabrication and stimulated emission of Er-doped nanocrystalline Si waveguides formed on Si substrates by laser ablation │ Appl. Phys. Lett. │ 74,120-122
236.	1998	Geometry-induced fractal behaviour: Fractional Brownian motion in a ballistic mesoscopic billiard │ Physica B │ 249・251,343-347
237.	1998	High-magnetic-field-induced large blueshift and depopulation of a quasi-one-dimensional electron-hole system in p-type modulation-doped semiconductor quantum wires │ Phys. Rev. B │ 57,2407-2414
238.	1998	In situ composition control of self-organized InGaAs dots │ J. Cryst. Growth │ 188,370-376
239.	1998	In situ observation and correction of resist patterns in atomic force microscopic lithography │ Appl. Phys. Lett. │ 72,2481-2483
240.	1998	Influences of surface V/III ration on the film quality during the GaN growth in gas-source molecular beam epitaxy │ Jpn. J. Appl. Phys. │ 37,L637-L639
241.	1998	InGaAs/GaAs quantum nanostructure fabrication on GaAs(111) A vicinal substrates by atomic layer epitaxy │ J. Appl. Phys. │ 83,5525-5528
242.	1998	Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfaces │ Appl. Phys. Lett. │ 72,1736-1738
243.	1998	Intrinsic stable orbits in open quantum dots │ Semicond. Sci. Technol. │ 13,A4-A6
244.	1998	Low temperature magnetotransport in ballistic quantum dots and wires │ Semicond. Sci. Technol. │ 13,A15-A17
245.	1998	Magnetoluminescence of self-assembled InP dots with varying sizes │ Phys. Rev. B │ 58,2026-2030
246.	1998	Metalorganic vapor phase epitaxy of manganese gallide thin films and growth temperature dependence of its crystal structure │ J. Crystal Growth │ 187,234-239
247.	1998	Observation of confinement-dependent exciton binding energy of GaN quantum dots │ Appl. Phys. Lett. │ 73,1104-1106
248.	1998	Periodically recurring wave function scarring and magneto transport in quantum dots │ Physica B │ 246・347,266-269
249.	1998	Phase coherent and incoherent backscattering of electron waves in corrugation gated quantum wires │ Phys. Low-Dim. Struct. │ 1・2,109-116
250.	1998	Quantum transport in high mobility modulation doped Ga0.25In0.75As/InP quantum wells │ J. Appl. Phys. │ 84,2112-2122
251.	1998	Real-time observations of the GaN dot formation by controlling growth mode on the AlGaN surface in gas-source molecular beam epitaxy │ J. Cryst. Growth │ 189,147-152
252.	1998	Scale factor mapping of statistical and exact self-similarity in billiards │ Semicond. Sci. Technol. │ 13,A41-A43
253.	1998	Size control of Si nanocrystallites formed in amorphous Si matrix by Er-doping │ Mater. Sci. Eng. B │ 51,154-157
254.	1998	Surface reaction mechanism and morphology control in AIP atomic layer epitaxy │ Thin Sol. Films │ 318,6-10
255.	1998	Surface structure change between InGaAs dots and InGaAsP flat surface induced by in situ arsenic/phosphorus replacement │ Microelectron. Eng. │ 43,3-10
256.	1998	Surface structure control of GaAs(111) A vicinal substrates by metal-organic vapor-phase epitaxy │ J. Cryst. Growth │ 183,43-48
257.	1998	The formation of GaN dots on AlxGa1-xN surfaces using Si in gas-source molecular beam epitaxy │ Appl. Phys. Lett. │ 73,344-346
258.	1998	The influence of environmental coupling on phase breaking in open quantum dots │ Solid State Elec. │ 42,1281-1285
259.	1998	Wave function scarring and magnetotransport in quantum dots │ Physica B │ 249・251,353-357
260.	1998	Wavefunction scarring and classical commensurability in corrugated quantum wires │ Solid State Elec. │ 42,1125-1130
261.	1997	Aharonov-Bohm oscillations in quantum dots: precise departures from h/e periodicity │ Superlatt. Microstr. │ 22,57-63
262.	1997	Atomic layer epitaxy of AIP and its application to X-ray multilayer mirror │ J. Cryst. Growth │ 180,15-21
263.	1997	Calculating the linear response functions of noninteracting electrons with a time-dependent Schrodinger equation │ Phys. Rev. E │ 56,1222-1229
264.	1997	Carrier transport in nanodevices │ Jpn. J. Appl. Phys. │ 36,1841-1845
265.	1997	Digital etching of GaAs │ Appl. Surf. Sci. │ 112,55-62
266.	1997	Effects of active hydrogen on atomic layer epitaxy of GaAs │ Appl. Surf. Sci. │ 112,118-121
267.	1997	Enhancement of the 15.4 nm line of the lithium like aluminum recombining plasma laser using a half cavity │ Jpn. J. Appl. Phys. │ 36,7048-7049
268.	1997	Giant back-scattering resonances in edge-state transport through quantum dots │ Phys. Rev. B │ 56,7477-7484
269.	1997	Landau level formation in semiconductor quantum dots in a high magnetic field │ Appl. Phys. Lett. │ 71,2316-2318
270.	1997	Linear scaling calculation for optical-absorption spectra of large hydrogenerated silicon nanocrystallites │ Phys. Rev. B │ 56,R4348-4350
271.	1997	Magnetically induced suppression of phase breaking in ballistic mesoscopic billiards │ Phys. Rev. B │ 55,1368-1371
272.	1997	Multiatomic step formation with excellent uniformity on vicinal (111)A GaAs surfaces by metalorganic vapor-phase epitaxy │ J. Cryst. Growth │ 173,27-32
273.	1997	New technique for fabrication of two-dimensional photonic bandgap crystals by selective epitaxy │ Jpn. J. Appl. Phys. │ 36,L286-L288
274.	1997	Novel spontaneous emission control in 3-dimensional photonic bandgap crystal cavity │ Mater. Sci. Eng. B │ 51,99-102
275.	1997	Observation and control of surface morphology of AIP grown by atomic layer epitaxy │ Appl. Phys. Lett. │ 71,1044-1046
276.	1997	Observation of amplified spontaneous emission in the soft X-ray region from a recombining lithiumlike aluminum plasma pumped by multipulse irradiation │ J. Opt. Soc. Am. B │ 14,1863-1869
277.	1997	Oxygen-induced defect luminescence in porous silicon │ Appl. Surf. Sci. │ 113・114,135-139
278.	1997	Periodic conductance fluctuations and lead-induced scarring in open quantum dots │ J. Phys. Condens. Mat. │ 9,5935-5950
279.	1997	Phase breaking as a probe of the intrinsic level spectrum of open quantum dots │ Phys. Stat. Sol. B │ 204,314-317
280.	1997	Phase breaking in a quantum billiard │ Int. J. Bifurcat. Chaos │ 7,937-943
281.	1997	Phase breaking of coherent electron waves in dot array systems │ Jpn. J. Appl. Phys. │ 36,3971-3973
282.	1997	Phase breaking of trapped electrons in a gated quantum dot │ Superlatt. Microstr. │ 22,69-74
283.	1997	Photoluminescence and probe effect of Er-doped nanometer-sized Si materials │ Appl. Surf. Sci. │ 113・114,121-125
284.	1997	Plasma interaction processes during the pulsed laser deposition of superconducting thin films │ Appl. Surf. Sci. │ 113・114,202-205
285.	1997	Quantum transport in open mesoscopic cavities │ Chaos, Solitons & Fractals │ 8,1299-1324
286.	1997	Quantum transport in single and multiple quantum dots │ Jpn. J. Appl. Phys. │ 36,3944-3950
287.	1997	Reflection wavelength control method for layer-by layer controlled X-ray multilayer mirrors │ Appl. Opt. │ 36,2152-2156
288.	1997	Reversible transition between InGaAs dot structure and InGaAsP flat surface │ Appl. Phys. Lett. │ 71,797-799
289.	1997	Selective area growth at multi-atomic-height steps arranged on GaAs (111)A vicinal surfaces by atomic layer epitaxy │ Appl. Surf. Sci. │ 112,132-137
290.	1997	Stability of regular orbits in ballistic quantum dot │ Phys. Lett. A │ 236,120-124
291.	1997	Stimulated emission from optically pumped GaN quantum dots │ Appl. Phys. Lett. │ 71,1299-1301
292.	1997	The role of electron phase coherence in quantum transport through open ballistic cavities │ Jpn. J. Appl. Phys. │ 36,3968-3970
293.	1997	Trajectory transition due to gate depletion in corrugation gated quantum wires │ Jpn. J. Appl. Phys. │ 36,1746-1748
294.	1996	Atomic layer epitaxy of GaAs and GaAsxP1-x on nominally oriented GaAs(111) substrates with high quality surface and interfaces │ J. Crystal Growth │ 160,21-26
295.	1996	Carrier dynamics in oxidized porous silicon │ J. Appl. Phys. │ 80,1749-1756
296.	1996	Carrier scattering processes in quantum wires at high magnetic fields by correlation field analysis │ Physica B │ 216,376-379
297.	1996	Device noise as a probe of electron motion in quantum dots at high magnetic fields │ Brazilian J. Physics │ 26,341-344
298.	1996	Direct observation of oxygen-induced luminescent states in porous silicon by tunable excitation time-resolved spectroscopy │ Appl. Phys. Lett. │ 68,949-951
299.	1996	Electronic structure of a model nanocrystalline/amorphous mixed-phase silicon │ Phys. Rev. B │ 54,13974-13979
300.	1996	Formation and electronic states of Si nanocrystallites in amorphous Si │ J. Non-Crys. Solids │ 198・200,847-852
301.	1996	Illumination-induced inhomogeneity in the carrier density profile of split gate devices │ Semicond. Sci. Tech. │ 11,1085-1089
302.	1996	Investigations of electron wave interference and quantum chaos in ballistic quantum dots with square geometry │ Brazilian J. Physics │ 26,285-288
303.	1996	Low temperature magnetoresistance in corrugation gated wires │ Czech. J. Phys. │ 46,2347-2348
304.	1996	Magnetic field effects in p-type modulation-doped GaAs quantum wires │ Physica B │ 227,38-41
305.	1996	Magnetoresistance of single-electron transistor with a superconducting loop │ Czech. J. Phys. │ 46,2297-2298
306.	1996	Novel surface emitting laser diode using photonic band-gap crystal cavity │ Appl. Phys. Lett. │ 69,791-793
307.	1996	Optical properties of semiconductor quantum dots in magnetic fields │ J. Luminescence │ 70,144-157
308.	1996	Oxygen atomic flux O enhancement by gas-pulsed electron cyclotron resonance plasma │ J. Appl. Phys. │ 81,2114-2118
309.	1996	Oxygen plasma induced enhancement and fatigue-suppression of the photoluminescence from porous Si │ J. Non-Crys. Solids │ 198・200,969-972
310.	1996	Periodic conductance fluctuations and stable orbits in mesoscopic semiconductor billiards │ Europhysics Lett. │ 35,529-534
311.	1996	Phase breaking in ballistic quantum dots: a correlation field analysis │ Surf. Sci. │ 361・362,730-734
312.	1996	Positron/positronium annihilation in nanocrystalline silicon thin films │ J. Radioanal. Nuc. Chem. │ 211,31-38
313.	1996	Room-temperature luminescence from erbium-doped silicon thin films prepared by laser ablation │ Appl. Phys. Lett. │ 69,3896-3898
314.	1996	Self limiting growth on nominally oriented (111)A GaAs substrates in atomic layer epitaxy │ Appl. Surf. Sci. │ 103,275-278
315.	1996	Self-assembling GaN quantum dots on AlxGa1-xN surfaces using a surfactant │ Appl. Phys. Lett. │ 69,4096-4098
316.	1996	The role of lead openings in regular mesoscopic billiards │ Supertlatt. Microstr. │ 20,287-295
317.	1996	Time-resolved photoluminescence of porous silicon under double-pulse excitation │ J. Non-Crys. Solids │ 198・200,965-968
318.	1996	Transient characteristics of nitrogen gas-pulsed electron cyclotron resonance plasma │ J. Vac. Sci. Tech. A │ 14,2814-2819
319.	1996	Transition from chaotic to regular quantum scattering in mesoscopic billiards with nominally regular geometry │ Physica B │ 227,148-151
320.	1996	Transport properties of superconducting SET transistor with a loop │ Physica B │ 227,235-237
321.	1996	Tunable UV laser induced digital etching of GaAs: wavelength dependence of etch rate and surface processes │ Appl. Surf. Sci. │ 106,365-368
322.	1995	Breakdown of correlated diffusion in quasiballistic quantum wires at high magnetic fields │ Phys. Rev. B │ 52,1793-1799
323.	1995	Characterization of GaAs/GaAsP quantum wire structures fabricated by atomic layer epitaxy │ J. Appl. Phys. │ 78,7277-7281
324.	1995	Correlation field analysis of the influence of device geometry and bulk disorder on electron │ Jpn. J. Appl. Phys. │ 34,1339-1341
325.	1995	Crystallization of amorphous silicon by NiSi2 precipitates │ Thin Solid Films │ 261,236-240
326.	1995	Effect of a magnetic field on the excitonic luminescence decay time in a GaAs-AlxGa1-xAs quantum well │ Jpn. J. Appl. Phys. │ 34,L547-L550
327.	1995	Effect of a magnetic field on the excitonic luminescence line shape in a quantum well │ Phys. Rev. B │ 51,4278-4284
328.	1995	Electron wave interference in ballistic and quasi-ballistic nanostructures │ Jpn. J. Appl. Phys. │ 34,6966-6970
329.	1995	Exciton states in two-dimensional systems of GaAs/AlAs multi-quantum-well structures under high magnetic fields │ Phys. Rev. B │ 51,9813-9819
330.	1995	Fast reconstruction transitions and fast surface reactions in short-pulse supersonic nozzle beam epitaxy │ J. Crys. Growth │ 150,622-626
331.	1995	In situ observation of undevelopment patterns in atomic force microscope lithography │ J. Photopolym. Sci. Technol. │ 8,677-678
332.	1995	In situ pattern etching of GaAs by trimethylindium and H2O2 gases with electron-beam-induced resist │ Semicond. Sci. Technol. │ 10,91-94
333.	1995	Is there a magnetic-field-induced breakdown in the universality of conductance fluctuations? │ Jpn. J. Appl. Phys. │ 34,4338-4341
334.	1995	Lead-induced transition to chaos in ballistic mesoscopic billiards │ Phys. Rev. B │ 52,RC R14336-R14339
335.	1995	Low dimensional transport in GaAs/AlGaAs quasi-one-dimensional wires by a correlation field analysis of phase coherent interference │ Mater. Sci. Eng. B │ 35,364-366
336.	1995	Magnetic field effects in direct- and indirect-gap semiconductor quantum dots │ Jpn. J. Appl. Phys. Suppl. │ 34,125-127
337.	1995	Nanocrystalline Si: a material constructed by Si quantum dots │ Mater. Sci. Eng B │ 35,467-471
338.	1995	Optical absorption of microcrystalline Si-Ni thin films │ J. Appl. Phys. │ 78,1987-1991
339.	1995	Phase breaking in ballistic quantum dots: Transition from two- to zero-dimensional behavior │ Phys. Rev. B │ 51,18037-18040
340.	1995	Room-temperature backbond oxidation of the porous silicon surface by oxygen radical irradiation │ Appl. Phys. Lett. │ 66,836-838
341.	1995	Spectral characteristics of conductance fluctuations in ballistic quantum dots: The influence of finite magnetic field and temperature │ Phys. Rev. B │ 52,8295-8304
342.	1995	Step induced desorption of AsHx in atomic layer epitaxy on GaAs (001) vicinal substrates │ Appl. Phys. Lett. │ 67,1283-1285
343.	1995	Structure and electrical transport in microcrystalline composite Si-NiSi2 thin films │ J. Phys. Chem. Solids │ 56,123-128
344.	1995	Study of scattering processes in quantum wires by a correlation field analysis of the phase coherent interferences │ Jpn. J. Appl. Phys. │ 34,4345-4347
345.	1995	Study on dimer density evolution during GaAs short-pulse supersonic nozzle beam epitaxy on (2 x 4)γ initial surface by millisecond time-resolved reflectance difference │ J. Crys. Growth │ 150,616-621
346.	1995	Surface reaction control in digital etching of GaAs by using a tunable UV laser system: reaction control mechanism in layer-by-layer etching │ Appl. Surf. Sci. │ 86,554-558
347.	1995	Temporal dynamics of a magnetoexciton in a quantum well │ Phys. Rev. B │ 52,17430-17434
348.	1995	Temporal evolution of hydrogen plasma produced with gas pulse injection scheme │ Surf. Coat. Tech. │ 74-75,345-350
349.	1995	The magnetic field dependent characteristics of conductance fluctuations in ballistic quantum dots │ Jpn. J. Appl. Phys. │ 34,4342-4344
350.	1995	Zero-current voltage fluctuations in quantum dots at high magnetic fields │ J. Phys. Soc. Jpn. │ 64,3618-3621
351.	1994	Additional dimer-row structure of 3C-SiC(001) surfaces observed by scanning tunneling microscopy │ Phys. Rev. B │ 50,4548-4553
352.	1994	Atomic layer epitaxy of AlAs using dimethylethylamine alane │ Jpn. J. Appl. Phys. │ 33,L1289-L1291
353.	1994	Control of the etching reaction of digital etching using tunable UV laser irradiation │ Appl. Surf. Sci. │ 82・83,193-199
354.	1994	Correlation field in quasi-ballistic narrow wires │ Physica B │ 194・196,1139-1140
355.	1994	Coulomb blockade of the Aharonov-Bohm effect in GaAs/AlxGa1-xAs quantum dots │ Phys. Rev. B │ 50,14983-14990
356.	1994	Deposition of gallium oxide and indium oxide on GaAs for in situ process use by alternating supply of TEGa, TMIn, and H2O2 as surge pulses │ J. Vac. Sci. Technol. A │ 12,120-124
357.	1994	Deposition of thin indium oxide film and its application to selective epitaxy for in situ processing │ Thin Solid Films │ 246,58-64
358.	1994	Digital etching by using a laser beam │ Appl. Surf. Sci. │ 79・80,104-109
359.	1994	Experimental studies of electronic transport in semiconductor quantum dot structures │ Solid-State Elec. │ 37,709-712
360.	1994	Fast evolution of surface dynamics during epitaxy of GaAs on c(4 x 4) reconstructed surface │ J. Crys. Growth │ 145,974-975
361.	1994	Formation of nanocrystallites in amorphous silicon thin films │ J. Crys. Growth │ 142,268-270
362.	1994	Generation of high-peak pulse beam of hydrogen plasma or use in short-pulsed chemical beam epitaxy │ Appl. Phys. Lett. │ 64,2220-2222
363.	1994	Giant backscattering resonances in the magneto-resistance of GaAs/AlGaAs quantum dots │ Superlatt. and Microstr. │ 16,161-164
364.	1994	Growth of ultrathin silver films by excimer-laser-induced decomposition of silver acetate in air │ Jpn. J. Appl. Phys. │ 33,L1313-L1315
365.	1994	In situ pattern deposition of In2O3 and in situ pattern etching of GaAs │ Appl. Phys. Lett. │ 65,1635-1637
366.	1994	Magnetic field dependence of optical absorption in Si nanocrystallites: A quantum size effect │ Solid State Comm. │ 92,665-668
367.	1994	Magneto-Coulomb oscillations │ Phys. Rev. B │ 49,11488-11491
368.	1994	Magneto-Coulomb oscillations in GaAs - AlGaAs quantum dot structures │ Superlatt. and Microstr. │ 15,99-103
369.	1994	Magnetotransport in quasi-ballistic narrow wires │ Physica B │ 201,357-360
370.	1994	Microstructure and photoluminescence of nanocrystalline silicon thin films │ J. Phys. D: Appl. Phys. │ 27,1575-1578
371.	1994	Millisecond time-resolved reflectance difference measurements of GaAs grown by short-pulse supersonic nozzle beam epitaxy │ Appl. Phys. Lett. │ 64,3285-3267
372.	1994	Observation of Aharonov-Bohm oscillations in the magnetoresistance of GaAs/AlGaAs quantum dot │ Jpn. J. Appl. Phys. │ 33,2509-2510
373.	1994	Observation of direct transitions in silicon nanocrystallites │ Jpn. J. Appl. Phys. │ 33,L899-L901
374.	1994	Optical, electrical and structural investigations of the transition from amorphous to microcrystalline silicon │ Jpn. J. Appl. Phys. │ 33,6082-6085
375.	1994	Quantum confinement in nanometer-sized silicon crystallites │ Phys. Rev. B │ 50,18654-18657
376.	1994	Radical-beam-induced surface reaction processes of porous Si │ Jpn. J. Appl. Phys. │ 33,7117-7122
377.	1994	Reduction of carbon impurity in GaAs by photo-irradiation in atomic layer epitaxy │ Appl. Surf. Sci. │ 79・80,232-236
378.	1994	Scaling properties of universal conductance fluctuations in quasi ballistic narrow wires │ Superlatt. and Microstr. │ 16,179-181
379.	1994	Short-pulse chemical beam epitaxy │ J. Cryst. Growth │ 136,200-203
380.	1994	Short-pulse supersonic nozzle beam epitaxy: A new approach for submonolayer controlled growth │ Appl. Phys. Lett. │ 64,1105-1107
381.	1994	Solid-state tunable deep-ultraviolet laser system from 198 to 300 nm │ Opt. Lett. │ 19,102-104
382.	1994	Spectral characteristics of conductance fluctuations in ballistic quantum dots │ Phys. Rev. B │ 50,18678-18681
383.	1994	Surface cleaning of metals by pulsed-laser irradiation in air │ Appl. Phys. A │ 59,281-288
384.	1994	Surface processes of selective growth by atomic layer epitaxy │ Appl. Surf. Sci. │ 82・83,57-63
385.	1994	Violet and blue light emissions from nanocrystalline silicon thin films │ Jpn. J. Appl. Phys. │ 33,L649-L651
386.	1994	Violet luminescence from anodized microcrystalline silicon │ Appl. Phys. Lett. │ 65,1290-1292
387.	1993	Alignment control of a liquid crystal on a photosensitive polyvinylalcohol film │ Jpn. J. Appl. Phys. │ 32,L93-L96
388.	1993	Atomic layer manipulation of III-V compounds │ Thin Solid Films │ 225,120-123
389.	1993	Composition change of indium oxide film by triethylgallium irradiation prepared for in situ selective epitaxy use │ Jpn. J. Appl. Phys. │ 32,4732-4736
390.	1993	Conductance fluctuations in a quasi-ballistic narrow wire confined by split metal gates │ Physica B │ 184,351-354
391.	1993	Crystallographic selective growth of GaAs by atomic layer epitaxy │ Appl. Phys. Lett. │ 63,1528-1530
392.	1993	Digital etching using KrF excimer laser: Approach to atomic-order-controlled etching by photo induced reaction │ Jpn. J. Appl. Phys. │ 32,6178-6181
393.	1993	Enhancement of soft X-ray emission from Al Plasma by pulse train laser irradiation │ Jpn. J. Appl. Phys. │ 32,L1538-L1541
394.	1993	Formation of low-dimensional structures by atomic layer epitaxy │ Optoelectronics - Devices and Tech. │ 8,509-522
395.	1993	Interference area of universal conductance fluctuations in narrow GaAs/AlGaAs wires │ Jpn. J. Appl. Phys. │ 32,528-531
396.	1993	Numerical study of the interference effects of electron waves scattered by impurities or slits in a quasi-one-dimensional system │ Phys. Rev. B │ 47,2423-2426
397.	1993	Scaling properties of universal conductance fluctuations in quasi-ballistic split-gate wires: Probing geometrical effects │ Phys. Rev. B │ 48,12353-12356
398.	1993	Selective epitaxy of GaAs on indium oxide mask followed by in situ removal of the mask │ Appl. Phys. Lett. │ 63,1634-1636
399.	1993	Surface photo-absorption study of the laser assisted atomic layer epitaxial growth process of GaAs │ Thin Solid Films │ 225,40-46
400.	1993	Surface processes in digital etching of GaAs │ Thin Solid Films │ 225,136-139
401.	1993	The transmission properties of quantum dots at high magnetic fields │ Jpn. J. Appl. Phys. │ 32,6246-6250
402.	1993	Thin gallium oxide film deposited in vacuum for in situ process use │ Jpn. J. Appl. Phy. │ 32,L329-L331
403.	1992	Ab initio cluster study of the interaction of hydrogen with the GaAs (100) surface │ Jpn. J. Appl. Phys. │ 31,1298-1302
404.	1992	Conductance fluctuations in a narrow GaAs/AlGaAs split gate wire │ Surf. Sci. │ 263,378-381
405.	1992	Conductance fluctuations in GaAs/AlGaAs narrow wires in quasi-ballistic regime │ Jpn. J. Appl. Phy. │ 31,4504-4507
406.	1992	Effect of side wall scattering on the relaxation time in a narrow GaAs/AlGaAs wire in magnetic field │ Superlatt. and Microstr. │ 11,195-197
407.	1992	Large radium new etching system using electron beam excited plasma │ J. Vac. Sci. Technol. B │ 10 (6),2699-2702
408.	1992	Modified perturbational method for the magnetoexciton ground state in quantum wells │ Phys. Rev. B │ 46,10269-10276
409.	1992	Molecular layer etching of GaAs │ Appl. Phys. Lett. │ 60,968-970
410.	1992	New etching system with a large diameter using electron beam excited plasma │ Jpn. J. Appl. Phy. │ 31,4357-4362
411.	1992	Numerical studies of quantum conduction through a junction of wide-narrow geometry │ Appl. Phys. Lett. │ 60,234-236
412.	1992	Numerical study of the charge distribution in a quantum wire consisting a junction of wide-narrow geometry │ J. Phys. Soc. Jpn │ 61,3829-3830
413.	1992	Observation of soft X-ray amplified spontaneous emission in a recombining Si plasma pumped by a low-power laser │ Jpn. J. Appl. Phys. │ 31,L92-L94
414.	1992	Self-limiting growth on β-SiC(001) surface │ Surface Science │ 273,437-441
415.	1992	Si desorption from a β-SiC(001) surface by an oxygen flux │ Surf. Sci. Lett. │ 278,L141-L146
416.	1992	Size effect in the low temperature magnetoresistance of narrow GaAs/AlGaAs wires │ Surf. Sci. │ 263,388-391
417.	1992	Study of surface processes in the digital etching of GaAs │ Jpn. J. Appl. Phys. │ 31,2212-2215
418.	1992	Time-resolved luminescence spectra of porous Si │ Jpn. J. Appl. Phy. │ 31,2470-2471
419.	1991	Ballistic electron transport on periodic and quasi-periodic triangular lattices of scatterers │ Jpn.J.Appl.Phys. │ 30,3250-3255
420.	1991	Laser assisted atomic layer epitaxy │ Materials Sci. and Eng. B │ 10,121-132
421.	1991	Low temperature magnetoresistance of a quasi-ballistic narrow wire confined by split metal gates │ Jpn. J. Appl. Phys. │ 30,3859-3861
422.	1991	Microfabricated submicron Al-filament biprism as applied to electron holography │ Jpn. J. Appl. Phys. │ 30,3272-3276
423.	1991	Patterned crystal growth of GaAs using laser scanning with atomic layer epitaxy │ J. Cryst. Growth │ 107,136-140
424.	1991	Surface kinetics of laser atomic layer epitaxy (Laser-ALE) of GaAs, AlAs and AlGaAs │ Denki Kagaku │ 59,1037-1042
425.	1991	The irradiation effects of an oxygen radical beam on the preparation of superconducting thin films │ Jpn. J. Appl. Phys. │ 30,L834-L837
426.	1990	Atomic layer epitaxy of AlAs and AlGaAs │ J. Cryst. Growth │ 99,540-544
427.	1990	Beam assisted layer-by-layer processes and the mechanism in III-V compounds │ Acta Polytechnica Scandinavica │ 195,55-65
428.	1990	Characterization of GaAs and AlGaAs layers grown by laser atomic layer epitaxy │ Jpn J. Appl. Phys. │ 29,1435-1436
429.	1990	Digital etching of GaAs: New approach of dry etching to atomic ordered processing │ Appl. Phys. Lett. │ 56,1552-1554
430.	1990	Laser assisted chemical beam epitaxy │ J. Crys. Growth │ 105,52-56
431.	1990	Laser crystal growth of semiconductors │ J. of Physics │ 14,79-97
432.	1990	Layer-by-layer controlled digital etching by means of an electron-beam-excited plasma system │ Jpn. J. Appl. Phys. │ 29,2216-2219
433.	1990	Reduction of textural drift in a laser recrystallized silicon-on-insulator structure employing liquid encapsulation │ Jpn. J. Appl. Phys. │ 29,L847-L849
434.	1990	Surface segregation of indium during growth of InGaAs in chemical beam epitaxy │ J. Crys. Growth │ 105,230-233
435.	1989	Induced defects in GaAs etched by low energy ions in electron beam excited plasma (EBEP) system │ Jpn. J. Appl. Phys. │ 28,2391-2395
436.	1989	Microstructures of GaAs fabricated by finely focused ion beam lithography │ Microelectronic Eng. │ 9,277-280
437.	1989	New fabrication technique of quantum wire structures with dimensions precisely controlled by the CBE Method │ Jpn. J. Appl. Phys. │ 28,L1083-L1085
438.	1989	Nonlocal voltage fluctuations in a quasi ballistic electron waveguide │ Solid State Commun. │ 69,811-815
439.	1989	Photo assisted chemical beam epitaxy of GaAs │ J. Cryst. Growth │ 95,142-144
440.	1989	Quantum size effect on the exciton polariton in GaAs thin films │ Solid State Commun. │ 72,215-218
441.	1989	Soft X-Ray Lasing in an Al Plasma Produced by a 6 J Laser │ Jpn. J. Appl. Phys. │ 28,L1010-L1012
442.	1989	Surface analysis by sputtered neutral mass spectrometry with electron-beam-excited plasma │ Surf. and Interface Anal. │ 14,595-597
443.	1989	The determination of the band offset of multi-quantum wells by magneto-optical measurements │ Solid State Commun. │ 74,159-163
444.	1988	A sputtered neutral mass spectrometer with high current, low energy ion bombardment │ J. Crys. Growth B │ 35,550-554
445.	1988	Effects of Hydrogen on growth mechanism of GaAs in chemical beam epitaxy │ J. Crys. Growth │ 93,265-269
446.	1988	Fabrication and transport characteristics of semiconductor wire and ring structures │ J. Vac. Sci. Technol B │ 6,1852-1855
447.	1988	Maskless ion implantation of cerium by focused ion beam │ Jpn. J. Appl. Phys. │ 27,L1157-L1159
448.	1988	Nonlocal quantum transport in narrow multibranched electron wave guide of GaAs-AlGaAs │ Solid State Commun. │ 68,1051-1054
449.	1988	Preparation of high-Tc superconducting films by Q-switched YAG laser sputtering │ Jpn. J. Appl. Phys. │ 27,L34-L36
450.	1988	Surface Processes in laser-atomic layer epitaxy (laser-ALE) of GaAs │ J. Crys. Growth │ 93,190-194
451.	1987	Atomic-layer growth of GaAs by modulated-continuous-wave laser metal-organic vapor-phase epitaxy │ J. Vac. Sci. & Technol. B │ 5,1460-1464
452.	1987	Effects of an electric field on the decay time of luminescence from a GaAs/Ga0.6Al0.4As multi-quantum-well structure │ Jpn. J. Appl. Phys. │ 26,1442-1446
453.	1987	New high current low energy ion source │ J. Vac.Sci.Technol. B │ 5,366-368
454.	1987	Observation of Aharonov-Bohm magnetoreistance oscillations in selectively doped GaAs-AlGaAs submicron structures │ Solid State Commun. │ 64,573-576
455.	1987	Optical characterization of undoped GaAs crystals grown by reduced pressure metal organic vapor-phase epitaxy │ J. Appl. Phys. │ 62,1376-1380
456.	1987	Sample size dependence of magnetoconductance fluctuation in narrow n+ -GaAs wires │ Solid State Commun. │ 63,1169-1171
457.	1987	Transient characteristics of luminescence from GaAs/Ga0.6Al0.4 As multi-quantum-well structure under resonant excitation │ Jpn. J. Appl. Phys. │ 26,1438-1440
458.	1987	Transient grating method applied to electron-transfer dynamics at a semiconductor/liquid interface │ J. Phys. Chem. │ 91,1696-1698
459.	1987	Universal magnetoconductance fluctuations in narrow n+ GaAs wires │ Solid State Commun. │ 61,385-389
460.	1986	Characteristics of laser metal organic vaporphase epitaxy in GaAs │ J. Appl. Phys. │ 60,3131-3135
461.	1986	Growth of GaAs by switched laser metal organic vapor phase epitaxy │ Appl. Phys. Letters │ 48,1787-1789
462.	1986	New high current low energy ion source │ Jpn. J. Appl. Phys. │ 25,L252-L253
463.	1986	Stepwise monolayer growth of GaAs by switched laser metal organic vaporphase epitaxy │ Appl. Phys. Letters │ 49,785-787
464.	1985	1 GW high power sub picosecond pulse generation in near IR region │ Opt. Commun. │ 52,425-428
465.	1985	Laser enhanced metal organic chemical vapor deposition crystal growth in GaAs │ Appl. Phys. Letters │ 47(1986年),48,95-96(1986年),378
466.	1985	Maskless fabrication of high quality DFB laser grating by laser induced chemical etching │ Jpn. J. Phys. │ 24,L294-L296
467.	1985	Transient characteristics of photoluminescence from GaAs/Ga0.7Al0.3As multi quantum well structures │ Jpn. J. Appl. Phys. │ 24,L53-L55
468.	1984	30nm micro-fabrication in thick PMMA photoresist by focus ion beam │ Jpn. J. Appl. Phys. │ 23,L232-L233
469.	1984	Anodic oxidation of AlxGa1-xAs │ J. Appl. Phys. │ 56,1895-1896
470.	1983	Compositional fine pattern formation at AlGaAs/GaAs interface by Zn implantation │ J. Appl. Phys. │ 54,1634-1635
471.	1982	High-power sub picosecond pulse generation in near-IR region by cavity-dumped passive and synchronous hybrid mode locking system │ Jpn. J. Appl. Phys. │ 21,1104
472.	1981	Dynamic behavior of photo darkening process in As2S3 charocogenide glass │ Phys. Stat. Sol. (a) │ 67,669-676
473.	1981	Tunable sub picosecond pulse generation in near-IR region from OX-725 dye laser by passive and synchronous hybrid mode locking method │ Jpn. J. Appl. Phys. │ 20,1595-1596
474.	1979	High spectroscopic qualities in blazed ion-etched holographic gratings │ Opt. Commun. │ 29,253-255
475.	1979	イオンエッチング法で作られたブレーズドホログラフィックグレーティングの光学的特性 │ 応用物理 │ 48,539-544
476.	1978	Ｎｄ：ＹＡＧレーザー励起による紫外可変波長ピコ秒色素レーザー │ レーザー研究 │ 6,310-314
477.	1977	Optical pulse generation from FM laser using gain dispersion │ Opt. Commun. │ 22,358-360
478.	1977	Tunable picosecond pulse source using distributed feedback laser │ Opt. Commun. │ 23,330-332
479.	1977	イオンエッチング法でブレーズされたホログラフィックグレーティングの製作 │ 分光研究 │ 26,327-333
480.	1976	Blazed ion-etched holographic gratings │ Optical Acta │ 23,701-707
481.	1976	Blazing of holographic grating by ion etching technique │ Jpn. J. Appl. Phys. │ 15,721-722
482.	1976	High efficient blazed grating couplers │ J. Opt. Soc. Am. │ 66,292-295
483.	1976	High-efficiency blazed grating couplers │ Appl. Phys. Letters │ 29,303-304
484.	1976	Highly collimated laser beam from tunable distributed feed back dye laser │ Jpn. J. Appl. Phys. │ 15,941-942
485.	1975	Electron-beam excited DFB laser in CdS │ Appl. Phys. Letters │ 26,24-26
486.	1975	Tunable distributed feedback dye laser │ Appl. Phys. Letters │ 27,687-688
487.	1975	可変波長ＤＦＢ色素レーザー │ レーザー研究 │ 3,28-33
488.	1974	Distributed feedback laser in CdS under electron beam excitation │ Jpn. J. Appl. Phys. Suppl. │ 44,39-43
489.	1974	Laser oscillation in simple corrugated optical wave guide │ Appl. Phys. Letters │ 24,537-539
490.	1974	Wavelength control of thin film DFB laser by changing film thickness │ Jpn. J. Appl. Phys. │ 13,1031-1032
491.	1973	Drift mobility measurements in copper phtalocyanie single crystals │ Mol. Cryst. and Liq. Cryst. │ 22,301-308
492.	1973	Temperature tuning of 4-methylumbelliferon laser │ Jpn. J. Appl. Phys. │ 12,624-625
493.	1972/03	(博士取得論文)フタロシアニン有機半導体の電気伝導機構の研究 │
494.	1972	Explanation of light-intensity dependence of photoconductivity in zinc phthalocyanine │ J. Appl. Phys. │ 43,249-251
495.	1971	Electrical and magnetic properties of phtalocyanie iodine charge transfer complex │ J. Phys. Soc Japan │ 31,524-528
496.	1971	Electrical Conduction in Phthalocyanie Single Crystals │ J. Phys. Soc. Japan │ 31,164-170
497.	1967	Electron spin resonance in diluted copper phthalocyanie │ J. Phys. Soc. Japan │ 23,1188
498.	1966	Uniaxial stress effects on electrical conductivity of DPPH single crystal │ J. Phys. Soc. Japan │ 21,394