Researcher Database

（Last updated : 2023-12-07 15:55:53）　

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KANEKO KENTARO

Department / Course Research Organization of Science and Technology

Title / Position Professor

Academic background
1.	2004/04/01～2008/03/31	Applied Materials Science │ Faculty of Engineering │ Osaka Prefecture University │ Graduated Bachelor of Engineering
2.	2008/04/01～2010/03/31	Doctoral Program (1st Semester) │ Electronic Science and Engineering │ Graduate School, Division of Engineering │ Kyoto University │ Completed Master of engineering
3.	2010/04/01～2013/03/31	Doctoral Program (2nd Semester) │ Electronic Science and Engineering │ Graduate School, Division of Engineering │ Kyoto University │ Completed Doctor of engineering

Business career
1.	2014/01/01 ～ 2018/10/31	Assistant Professor │ Photonics and Electronics Science and Engineering Center │ Graduate school of engineering
2.	2018/11/01 ～ 2022/06/30	Lecturer │ Engineering Education Research Center │ Graduate school of engineering
3.	2022/07/01 ～	Professor │ Research Organization of Science and Technology │ Ritsumeikan University
4.	2023/04/01 ～	Fellow │ │ Ritsumeikan Advanced Research Academy (RARA)

Research activities
1.	～	Institute of Electrical and Electronics Engineers (IEEE)

Present specialized field
Inorganic materials and properties, Thin film/surface and interfacial physical properties, Crystal engineering, Electric and electronic materials (Keyword：metastable phase, non-equilibrium materials, oxides, crystal growth, power semiconductor)

Papers
1.	2021/08	Establishment of a growth route of crystallized rutile GeO2 thin film (>= 1 mu m/h) and its structural properties │ APPLIED PHYSICS LETTERS │ 119 (6),pp.ARTN 062104
2.	2021/05	Analysis of Deep Traps in Mist Chemical Vapor Deposition-Grown n-Type alpha-Ga2O3 by Photocapacitance Method │ PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS │ 258 (5),pp.ARTN 2000622
3.	2021/05	Initial nucleation scheme of Ga2O3 on (0001) sapphire by mist CVD for the growth of alpha-phase │ JAPANESE JOURNAL OF APPLIED PHYSICS │ 60 (5),pp.ARTN 055501
4.	2021/05	Thermal stability of alpha-(AlxGa1-x)(2)O-3 films grown on c-plane sapphire substrates with an Al composition up to 90% │ JAPANESE JOURNAL OF APPLIED PHYSICS │ 60 (SB),pp.ARTN SBBD13-SBBD13
5.	2021/03	Ultra-wide bandgap corundum-structured p-type alpha-(Ir,Ga)(2)O-3 alloys for alpha-Ga2O3 electronics │ APPLIED PHYSICS LETTERS │ 118 (10),pp.ARTN 102104
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Department laboratory expense researcher number
50643061