Researcher Database

（Last updated : 2023-02-16 20:05:11）

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ARAKI Tsutomu

Department / Course College of Science and Engineering Department of Electrical and Electronic Engineering

Title / Position Professor

Other Affiliations
1.	Graduate School of Science and Engineering

Academic background
1.	1997/01 Degree Acquisition	│ Osaka Prefecture University Ph.D. (Engineering)
2.	～1992	Department of Metal Engineering │ Faculty of Engineering │ Osaka Prefecture University │ Graduated
3.	～1994	Doctoral Program (1st Semester) │ Metallurgy │ Graduate School, Division of Engineering │ Osaka Prefecture University │ Completed
4.	～1996	Doctorial Course │ Metallurgy │ Graduate School, Division of Engineering │ Osaka Prefecture University │ Completed

Research activities
1.		The Japan Society of Applied Physics
2.		The Japanese Association for Crystal Growth
3.		The Institute of Electronics, Information and Communication Engineers (IEICE)

Research summary
The appearance of a new semiconductor known as gallium ni-tride resulted in blue light emitting diodes, white light emitting diodes and the Blu-ray Disc, completely changing our lives. If we can now extract the full potential of this semiconductor we will be able to create new optical/electronic devices that will solve important problems in the 21st century, which encompass energy, the environment, health and medical care etc. For ex-ample we can expect long-life light sources with less power consumption, solar cells of extremely high conversion efficiency, highly-efficient inverters that will support battery car technology, small and high power UV light sources for sterilization etc. Our laboratory is promoting global cutting-edge research from the fabrication of semiconductor materials through to evaluating their properties of and creating devices while obtaining support from the Ministry of Education, Culture, Sports, Science and Technology and the Ministry of Economy, Trade and Industry in order to realize semiconductor electronics that suit the 21st century.

Books
1.	2009	Indium Nitride and Related Alloys │ ,pp.1-50 (Co-authored)

Papers
1.	2022/02/15	Observation of Defect Structure in ScAlMgO₄ Crystal using X-ray Topography │ J. Cryst. Growth │ 580,pp.126477/1-126477/5 (Co-authored)
2.	2021/10/15	Repeatability and Mechanisms of Threading Dislocation Reduction in InN Film Grown with In Situ Surface Modification by Radical Beam Irradiation │ Journal of the Society of Materials Science, Japan │ 70 (10),pp.732-737 (Co-authored)
3.	2020/10/15	Van der Waals Epitaxy of Indium Nitride Crystals on Graphitic Structure by RF-MBE │ Journal of the Society of Materials Science, Japan │ ,pp.701-706 (Co-authored)
4.	2020/08/27	Correlation Between Crystal Warpage and Swelling of 4H-SiC Through Implantation and Annealing │ Semiconductor Science and Technology │ 35,pp.105008/1-105008/7 (Co-authored)
5.	2020/06/04	Thermal Conductivity of van der Waals Hetero-bilayer of MoS₂/MoSe₂ │ 13,pp.75001/1-75001/5 (Co-authored)
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Academic conference presentation
1.	2022/09	A novel ultra-wide bandgap alloy system based on rutile-type oxides (The European Materials Research Society (E-MRS) 2022 Fall Meeting)
2.	2022/03/25	THz-TDSEを用いたr面サファイア基板上グラフェンの電気的特性評価 (2022年春季第69回応用物理学会学術講演会)
3.	2022/03/24	RF-MBE法によるDERI法を用いたScAlMgO₄基板上GaN結晶成長 (2022年春季第69回応用物理学会学術講演会)
4.	2022/03/09	Growth of Ultra-Thin GaN/AlN Superlattice Structure toward Deep-UV Emission (14th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials/15th International Conference on Plasma-Nano Technology & Science (ISPlasma 2022/IC-PLANTS 2022))
5.	2022/03/08	Microstructural Characterization of Nitride Semiconductor Films Grown on ScAlMgO₄ Substrate by RF-MBE (14th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials/15th International Conference on Plasma-Nano Technology & Science (ISPlasma 2022/IC-PLANTS 2022))
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External Researcher ID
ORCID ID
0000-0001-5943-1145