研究者学術情報データベース

ムラタ　ジュンジ
村田　順二
MURATA Junji

所属理工学部機械工学科

職名教授

論文
1.	2026/01	Liquid-free electrochemical approach for direct patterning of ITO films with polymer electrolyte stamps for flexible transparent electrodes │ Applied Surface Science │ 716,164674
2.	2025/10	Review of physicochemical-assisted nanomanufacturing processes for wide-bandgap semiconductor wafers │ International Journal of Machine Tools and Manufacture │ ,104321-104321頁
3.	2025/08	Maskless soft lithography for fabricating micro- and nano-scale Ag structures via solid-state electrochemical etching using a polymer electrolyte membrane for optoelectronic and sensing applications │ Materials Advances │ (16),5424-5438頁
4.	2025/02/27	Soft Copper Nanoimprinting via Solid-State Electrochemical Etching for Flexible Optoelectronics │ ACS Applied Materials & Interfaces │ 17 (14),21929-21939頁
5.	2024/09/24	Solid-state electrochemical oxidation with polyelectrolyte membrane stamps for micro-/nanoscale pattern formation on Au surfaces │ Nanoscale │ (16),18811-18823頁
6.	2024/08/15	Sustainable Electrochemical Mechanical Polishing (ECMP) for 4H-SiC wafer using chemical-free polishing slurry with hydrocarbon-based solid polymer electrolyte │ Applied Surface Science │
7.	2024/03/01	Ultrafast Solid-State Electrochemical Imprinting Utilizing Polymer Electrolyte Membrane Stamps for Static/Dynamic Structural Coloration and Letter Encryption │ Small Methods │
8.	2024/01/17	Cu Direct Nanopatterning Using Solid-State Electrochemical Dissolution at the Anode/Polymer Electrolyte Membrane Interface │ Advanced Materials Interface │
9.	2023/07	Environment-friendly electrochemical mechanical polishing using solid polymer electrolyte/CeO2 composite pad for highly efficient finishing of 4H-SiC (0001) surface │ Applied Surface Science │ 625,157190
10.	2022/12	Improvement in the polishing characteristics of titanium-based materials using electrochemical mechanical polishing │ Surfaces and Interfaces │ 35,102490
11.	2022/03/15	Direct micropatterning on a titanium surface through electrochemical imprint lithography with a polymer electrolyte membrane stamp │ Microelectronic Engineering │ 257,111752
12.	2021/11	High-efficiency wafer-scale finishing of 4H-SiC (0001) surface using chemical-free electrochemical mechanical method with a solid polymer electrolyte │ Diamond and Related Materials │ (120),108700
13.	2021	Electrochemical imprint lithography on Si surface using a patterned polymer electrolyte membrane │ Materials Chemistry and Physics │ 259,124081
14.	2021	砥粒の滞留性に着目した微粒子添加ラッピングによる研磨特性の向上 │ 砥粒加工学会誌 │ 65,195
15.	2020/03	Investigation of Electrolytic Condition on Abrasive-Free Electrochemical Mechanical Polishing of 4H-SiC Using Ce Thin Film │ ECS Journal of Solid State Science and Technology │ 9 (3),034002
16.	2019/11	Photo-Assisted Chemical Mechanical Polishing of Si Wafer Using Phosphorescent Particles as a Luminescent Agent │ ECS Journal of Solid State Science and Technology │ 8 (11),P717-P733
17.	2019	Abrasive-free surface finishing of glass using a Ce film │ 265,56-62
18.	2018	Liquid electrolyte-free electrochemical oxidation of GaN surface using a solid polymer electrolyte toward electrochemical mechanical polishing │ 97,110-113
19.	2017	Polishing-pad-free electrochemical mechanical polishing of single-crystalline SiC surfaces using polyurethane–CeO₂ core–shell particles │ 114,1-7
20.	2016/03	複合砥粒を用いた研磨に適した研磨パッドの表面構造 │ 日本機械学会論文集 │ 82(835) (15-00447-15-00447)
21.	2016/02	Polymer/CeO₂-Fe₃O₄ multicomponent core-shell particles for high-efficiency magnetic-field-assisted polishing processes │ 101,28-34
22.	2015/11	機械工学導入教育における精密研磨技術を題材とした創造的教育プログラム │ 工学教育 │ 63(6),58-63
23.	2015/07	Photo-electrochemical etching of free-standing GaN wafer surfaces grown by hydride vapor phase epitaxy │ 171,89-95
24.	2014/09	エポキシ樹脂研磨パッドの粘弾性と研磨特性 │ 日本機械学会論文集 │ 80(817) (SMM0253-1-11)
25.	2014/08	ワイヤ擦過援用ウェットエッチングによるシリコンの高アスペクト比溝形成 -シリコンインゴットの切断に向けた基礎的検討- │ 日本機械学会論文集 │ 80(815) (SMM0183-1-10)
26.	2014/06	電着工具用の部分Ni被覆ダイヤモンド砥粒の開発 │ 日本機械学会論文集 │ 80(813) (SMM0111-1-12)
27.	2014/02	Enhancement of photoluminescence efficiency from GaN(0001) by surface treatment │ 53 (021001-1-5)
28.	2013/12	エポキシ樹脂を適用したスエードパッドによるガラス研磨特性の向上 │ 日本機械学会論文集C編 │ 79(808),5019-5028
29.	2013/02	Bias-Assisted Photochemical Planarization of GaN(0001) Substrate with Damage Layer │ 52(3R) (036504-1-4)
30.	2012/07	ガラス研磨における酸化セリウムの代替砥粒開発 │ 日本機械学会論文集C編 │ 78 (790),2710-2719
31.	2012/05	Structural and chemical characteristics of atomically smooth GaN surfaces prepared by abrasive-free polishing with Pt catalyst │ Journal of Crystal Growth │ 349,83-88
32.	2012/03	Atomically controlled chemical polishing of GaN using platinum and hydrofluoric acid │ Physica Status Solidi C │ 9,433-435
33.	2012/03	Improvement of Removal Rate in Abrasive-free Planarization of 4H-SiC Substrates Using Catalytic Platinum and Hydrofluoric Acid │ Japanese Journal of Applied Physics │ 51,2012
34.	2012/01	Atomically Smooth Gallium Nitride Surfaces prepared by chemical Etching with Platinum Catalyst in Water │ Journal of the Electrochemical Society │ 159 (4),H417-H420
35.	2012	滞留性を考慮した複合砥粒の開発とその研磨特性 │ 日本機械学会論文集（C編） │ 掲載決定
36.	2011/04	Dependence of process characteristics on atomic-step density in catalyst-referred etching of 4H?SiC (0001) surface │ Journal of Nanoscience and Nanotechnology │ 11 (4),2928-2930
37.	2011/04	Efficient wet etching of GaN (0001) substrate with subsurface damage layer │ Journal of Nanoscience and Nanotechnology │ 11 (04),2979-2982
38.	2011/04	Improved Optical and Electrical Characteristics of Free-standing GaN substrates by Chemical Polishing Utilizing Photo-Electrochemical Method │ Journal of Nanoscience and Nanotechnology │ 11 (04),2882-2885
39.	2011/04	Structure and Magnetic Properties of Mono- and Bi-Layer Graphene Films on Ultraprecision Figured 4H-SiC(0001) Surfaces │ Journal of Nanoscience and Nanotechnology │ 11 (04),2897-2902
40.	2011/02	Abrasive-free planarization of 3-inch 4H-SiC substrate using catalyst-referred etching │ Materials Science Forum │ 679-680,493-495
41.	2011/02	TEM observation of 8 deg off-axis 4H-SiC(0001) surfaces planarized by catalyst-referred etching │ Materials Science Forum │ 679-680,489-492
42.	2011	Formation of wide and atomically ﬂat graphene layers on ultraprecision-ﬁgured4H-SiC(0001) surfaces │ Surface Science │ 605,597-605
43.	2011	Formation of wide and atomically flat graphene layers on ultraprecision-figured4H-SiC(0001) surfaces │ 605,597-605
44.	2011	Influence of gallium additives on surface roughness for photoelectrochemical planarization of GaN │ Physica Status Solidi (c) │ 8,2223-2225
45.	2011	ガラス研磨用エポキシ樹脂研磨パッドの開発 │ 日本機械学会論文集C編 │ 77 (777),2153-2161
46.	2011	ガラス研磨用酸化セリウム低減化技術の動向 │ 機能材料 │ 31 (7),31-36
47.	2010/12	電鋳技術を適用した水晶研磨用極薄キャリアの開発 │ 日本機械学會論文集 C編 │ 76 (772),3837-3842
48.	2010/08	On-machine Method to Condition the Grinding Ability of Resin-Bond Wheels │ Advanced Materials Research │ 126-128,159-164
49.	2010/08	On-machine Method to Condition the Grinding Ability of Resin-Bond Wheels │ Advanced Materials Research │ ,126-128 159-164
50.	2010	Influence of the UV light Intensity on the Photoelectrochemical Planarization Technique for Gallium Nitride │ Materials Science Forum │ 645-648,795-798
51.	2010	Reduction of surface roughness of 4H-SiC by catalyst-referred etching │ Materials Science Forum │ 645-648,775-758
52.	2010	超平坦化加工を施した4H-SiC (0001)表面－高品質グラフェン作製への応用－ │ 表面科学 │ 31,466-473
53.	2009	A Study on a Surface Preparation Method for Single-Crystal SiC Using an Fe Catalyst │ Journal of Electronic Materials │ 38,159-163
54.	2009	Planarization of GaN (0001) Surface by Photo-Electrochemical Method with Solid Acidic or Basic Catalyst │ Japanese Journal of Applied Physics │ 48,121001-12100104
55.	2008	Chemical planarization of GaN using hydroxyl radicals generated on a catalyst plate in H2O2 solution │ Journal of Crystal Growth │ 310,1637-1641
56.	2008	Damage-free Planarization of 2-inch 4H-SiC Wafer Using Pt Catalyst Plate and HF solution │ Materials Science Forum │ 600-603,835-838
57.	2008	New chemical planarization of SiC and GaN using an Fe plate in H2O2 solution │ Materials Science Forum │ 600-603,815-818
58.	2007	Atomic-scale flattening of SiC surfaces by electroless chemical etching in HF solution with Pt catalyst │ Applied Physics Letters │ 90,202106 1-3
59.	2007	Catalyst-referred etching of 4H-SiC substrate using hydroxyl radicals generated from hydrogen peroxide molecules │ Surface and Interface Analysis │ 40,998-1001
60.	2007	Catalyst-Referred Etching of Silicon │ Science and Technology of Advanced Materials │ 8,162
61.	2007	Damage-free Planarization of 4H-SiC (0001) by Catalyst-Referred Etching │ Materials Science Forum │ 556-557,749-751
62.	2007	Defect-Free Planarization of 4H-SiC(0001) Substrate Using Reference Plate │ Japanese Journal of Applied Physics │ 47,104-107
63.	2007	Fabrication of damascene Cu wirings using solid acidic catalyst │ Science and Technology of Advanced Materials │ 8,166-169
64.	2006	Novel abrasive-free planarization of 4H-SiC (0001) using catalyst │ Journal of Electronic Materials │ 35,L11-L14