研究者学術情報データベース

ムラカミ　マサノリ
村上　正紀
MURAKAMI Masanori

所属立命館グローバル・イノベーション研究機構

職名特別研究フェロー

論文
1.	2012	“Oxygen-Induced Barrier Failure in Ti-Based Self-Formed and Ta/TaN Barrier for Cu Interconnects” │ Japanese Journal of Applied Physics │ (51),04DB06-1-B06-5
2.	2012	” Role of Cu Film Texture in Grain Growth Correlated with Twin Boundary Formation” │ Acta Materialia │ (60),588-595
3.	2011	Structure Analyses of Ti-Based Self-Formed Barrier Layers │ Japanese Journal of Applied Physics 50 │ ,04DB03-1-B03-5
4.	2011	“Globalization of Japanese manufacturing: Back to Sprits of Oumi Merchants” │ Chemistry & Chemical Industry, │ (64-1),62
5.	2011	” Growth of Ti-Based Interface Layer in Cu(Ti)/Glass Samples” │ Materials Transactions │ (52),491-497
6.	2010/06	A Key of Self-Formed Barrier Technique for Reliability Improvement of Cu Dual Damascene Interconnects │ 2010 IEEE International Interconnect Technology Conference Proceedings, edited by M. Shapiro, S.P. Jeng, R. Cartuyvels in San Francisco on June 7-9, │
7.	2010/06	Characterization of Self-Formed Ti-Based Layers in Cu(Ti)/Dielectric-Layer Samples Using X-Ray Photoelectron Spectroscopy │ 2010 IEEE International Interconnect Technology Conference Proceedings, edited by M. Shapiro, S.P. Jeng, R. Cartuyvels in San Francisco on June 7-9, │ ,318
8.	2010	Application of Ti-Based Self-Formation Barrier Layers to Cu Dual-Damascene Interconncets │ AIP Conference Proceedings Vol. 1300 on Stress-induced Phenomena in Metallization, held in Bad Schandau, Germany, │ ,91-97
9.	2010	Performance of Cu Dual-Damascene Interconnects Using a Thin Ti-Based Self-Formed Barrier Layer for 28-nm Node and Beyond │ Japanese Journal of Applied Physics │
10.	2010	Resistivity Reduction and Adhesion Increase Induced by Surface and Interface Segregation of Ti Atoms in Cu(Ti) Alloy Films on Glass Substrates │ Materials Transactions 51 │ ,1627-1632
11.	2010	Ti-Rich Barrier Layer Self-Formed on Porous-Low-k Layers Using Cu(1 at.%Ti) Alloy Films │ J. Electro. Mater. │ (39),1326-1333
12.	2010	“Background of R-GIRO program” │ RITSUMEIKAN　UNIVERSITY　NEWSLETTER　SPRING/SUMMER │ (18),2-3
13.	2010	“Effects of Pore Sealing on Self-Formation of Ti-Rich Barrier Layers in Cu(Ti)/Porous-Low-k Samples.” │ Japanese Journal of Applied Physics │
14.	2009	“Effects of TiN Buffer Layer Thickness on GaN Growth” │ J. Elect. Mater., vol. 38 │ ,511-517
15.	2009	“Growth Analysis of Self-Formed Ti-Rich Interface Layers in Cu(Ti)/Dielectric-layer Samples using Rutherford Backscattering Spectrometry” │ 2009 IEEE International Interconnect Technology Conference Proceedings │
16.	2009	“Growth and microstructure of epitaxial Ti3SiC2 contact layers on SiC.” │ Mater. Trans., 50 │ ,1071-1075
17.	2009	“Ohmic Contacts on Silicon Carbide: The First Monolayer and Its Electronic Effect.” │ Phys. Rev. B, 80 │ ,245-303
18.	2009	“Rutherford Backscattering Spectrometry Analysis of Growth Rate and Activation Energy for Self-Formed Ti-Rich Interface Layers in Cu(Ti)/Low-k Samples.” │ Materials Research Society Symposium Proceedings Vol. 1156 │ ,9
19.	2009	“Rutherford Backscattering Spectrometry Analysis of Self-Formed Ti-Rich Interface Layer Growth in Cu(Ti)/Low-k Samples.” │ J. Electro. Mater.38 │ ,1913-1920
20.	2009	“Self-Formed Ti-Rich Barrier Layers in Cu(Ti)/Low-k Samples.” │ AIP Conference Proceedings Vol. 1143 │ ,118-131
21.	2008	“Effects of Substrate Materials on Self-Formation Kinetics of Ti-Rich Barrier Layers in Cu(1at.%Ti)/Low-k Samples.” │ Materials Transactions, vol. 49 │ ,1987-1993
22.	2008	“Self-Formation of Ti-Rich Layers at Cu(Ti)/Low-k Interfaces” │ Materials Research Society Symposium Proceedings Vol. 1079E │ ,8-13
23.	2008	“Simultaneous Formation of N- and P-Type Ohmic Contacts to 4H-SiC Using the Binary Ni/Al System” │ Materials Research Society Symposium Proceedings Vol. 1069 │ ,1-6
24.	2008	“Simultaneous Formation of Ni/Al Ohmic Contacts to Both N- and P-type 　4H-SiC” │ J. Elect. Mater. 37 │ ,1674-1680
25.	2008	”Characterization of Self-Formed Ti-Rich Interface Layers in Cu(Ti)/Low-k Samples” │ J. Electro. Mater │ 37,1148-57
26.	2007	Effect of annealing ambient on self-formation mechanism of diffusion barrier layers used in Cu(Ti) interconnects │ J. Elect. Mater. │ 36,258-265
27.	2007	Effect of Reducing Thickness of TiN buffer layers on Epitaxial Growth of GaN layers │ Materials Science Forum. │ 561-565,1217-1220
28.	2007	Effects of substrate materials on self-formation of Ti-rich interface layers in Cu(Ti) alloy films │ J. Elect. Mater. │ 36,606-613
29.	2007	Electrical Properties and Microstructures of Ultraviolet Transparent Ga2O3 Thin Films │ Materials Science Forum. │ 561-565,1233-1236
30.	2007	Fabrication of Cu(Ti) Alloy Interconnects with Self-Formation of Thin Barrier Metal Layers Using a High-Pressure Annealing Process” │ J. Electron. Mater. 36 │ ,1658-1661
31.	2007	Self-formation of Ti-rich Interfacial Layers in Cu(Ti) Alloy Film │ Japanese Journal of Applied Physics. │ 46,1942-1976
32.	2007	“Role of interface layers and localized states in TiAl-based ohmic contacts to p-type 4H-SiC.” │ J. Electron. Mater., 36 │ ,277-284
33.	2006	Effects of Al ion-implantation to 4H-SiC on the specific contact resistance of Ti3SiC2 based contacts │ Science and Technology of Advanced Materials. │ 7,496-501
34.	2006	Electrical resistivity of polycrystalline Cu interconnects with nano-scale line width │ J. Vac. Sci. Technol. │ B24,190-194
35.	2006	Epitaxial growth of GaN layers on metallic TiN buffer layers │ J. Elect. Mater. │ 35,1806-1812
36.	2006	“Characterization of Ti/Al ohmic contacts to p-type 4H-SiC using cathodoluminescence and Auger 　electron spectroscopies.” │ Mater. Sci. Forum 527-529 │ ,891-894
37.	2005	Formation of Ti Diffusion Barrier Layers in Thin Cu(Ti) Alloy Films │ J. Elect. Mater. │ 34,592-599
38.	2005	Grain growth mechanism of Cu thin films │ Mater. Trans. │ 46,1737-1740
39.	2005	Growth of GaN on nitriding TiN buffer layers │ Mater.Trans. │ 46,1975-1978
40.	2005	Microstructural analysis of CdTe radiation detectors with indium electrodes │ Mater. Trans. │ 46,1991-1995
41.	2005	Simultaneous formation of p-and n-type ohmic contacts to 4H-SiC using ternary Ni/Ti/Al system │ J.Elect.Mater. │ 34,1310-1312
42.	2005	The Effect of Target Purities on Grain Growth in Sputtered Copper Thin Films │ Mater. Trans. │ 46,1036-1041
43.	2004	Correlation between the electrical properties and the interfacial microstructures of TiAl-based ohmic contacts to p-type 4H-SiC │ J. Elect. Mater. │ 33,460-466
44.	2004	Determination of Parameters to Control Electrical Resistivities of Nano-Scale Copper Interconnects │ Trans. Mater. Res.Soc.Japan. │ 29,51-54
45.	2004	Development of Electrode Materials for Semiconductor Devices │ Trans. Mater. Res. Soc. Japan │ 29,45-50
46.	2004	Effect of organic additives on formation and growth behavior of micro-void in electroplating copper films │ Mater.Trans. │ 45,3172-3176
47.	2004	Electrical properties and microstructure of ternary Ge/Ti/Al ohmic contacts to p-type 4H-SiC │ J. Appl. Phys. │ 96,4976-81
48.	2004	Microstructure of amorphous tantalum nitride thin films │ Thin Solid Films. │ 460,222-226
49.	2004	Ternary TiAlGe ohmic contacts for p-type 4H-SiC │ J. Appl. Phys. │ 95,2187-2189
50.	2004	The Effect of Strain Distribution on Abnormal Grain Growth in Cu Thin Films │ Mater.Trans. │ 45,3033-3038
51.	2003	Development of Ni/Al and Ni/Ti/Al ohmic contact materials for p-type 4H-SiC │ Mater. Sci. Eng. │ B98,286-293
52.	2003	Effects of vacuum annealing on electrical properties of GaN contacts │ J. Elect. Mater. │ 32,957-963
53.	2003	Field Emission of Polycrystalline Diamond Films Grown by Microwave-plasma Chemical Vapor Deposition. II. Effect of p-type conduction │ Diamond and Related Materials │
54.	2003	Influence of oxygen on luminescence and vibrational spectra of Mg-doped GaN │ Phys. Stat. Sol. (b) │ 240,356-359
55.	2003	The effect of strain on abnormal grain growth in Cu thin films │ J. Elect. Mater. │ 32,261-267
56.	2002	CoAl Ohmic Contact Materials with Improved Surface Morphology for p-type 4H-Sic │ Mater. Sci. Forum │ 389-393,885-888
57.	2002	Correlation Between Microstructure and Barrier Properties of TiN Thin Films Used in Cu Interconnects │ Thin Solid Films. │ 416,136-144
58.	2002	Effect of Annealing Atmosphere on Void Formation in Copper Interconnects │ Mater. Trans. │ 43,1624-1628
59.	2002	Effect of Pd or Pt Addition to Ti/Al Ohmic Contact Materials for n-type AlGaN │ Appl. Phys. Lett. │ 80,2934-36
60.	2002	Effect of sp2/sp3 Bonding Ratios on Field Emission Properties of Diamond-like Carbon Films grown by Microwave Plasma Chemical Vapor Deposition │ Diamond and Related Materials │ 11,1429-1435
61.	2002	Field Emission of Polycrystalline Diamond Films Grown by Microwave-plasma Chemical Vapor Deposition. I. Effects of surface morphology of diamond │ Diamond and Related Materials │ 11,1897-1904
62.	2002	Formation Mechanism of Low Contact Resistance PdZn-based Ohmic Contacts for p-type InP │ Materials Transaction │ 43,1352-1359
63.	2002	Low Restance TiAl Ohmic contacts with Multi-layered structure for p-type 4H-SiC │ Materials Trans. │ 43,1684-1688
64.	2002	Microstructural Analysis of NiInGe ohmic contacts for n-type GaAs │ J.Elect.Mater. │ 31,76-81
65.	2002	Simultaneous Observation of Luminescence and Dissociation Processes of Mg-H Complex for Mg-doped GaN │ J.Appl.Phys. │ 92,3657-3661
66.	2001	Deterioration Mechanism of Low Resistance TaTi Ohmic Contact for p-GaN │ Mater. Sci. Eng. │ 13
67.	2001	Development of Pt-based Ohmic Contact Materials for p-type GaN │ J.Appl. Phys. │ 89,2826-2831
68.	2001	Surface Damage on Diamond-based Electron Emitters │ New Diamond and Frontier Carbon Technology │ 11,277-283
69.	2000	Effect of the first antimony layer on AuZn ohmic contacts to p-type InP │ J.Vac Sci. Technol. │ B-18,1957-1961
70.	2000	Role of NiO Layers on Electrical Properties of NiAu-based Ohmic contacts for p-type GaN │ J. Elect. Mater. │ 29,18-19
71.	2000	The Effect of Thin Antimony Layer Addition on PdZn Ohmic Contacts for p-type InP │ Appl.Surf. Sci. │ 159-160,174-178
72.	1999	Effect of Annealing in an Oxygen Ambient on Electrical Properties of Ohmic Contact to p-type GaN │ J. Elect. Mater. │ 28,341-346
73.	1999	Low Resistance Ta / Ti Ohmic Contacts for p-type GaN │ Appl. Phys. Lett. │ 74,(275-277)
74.	1999	Near-noble trarsition-metal-based Ohmic Contacts to p-InP : Comparrison of Ni and Pd as a Bare Metal │ J. Appl. Phys. │ 85,7792-7796
75.	1999	Ohmic Contact Materials for p-ZnSe and p- GaN │ Inst. Phys. Conf. Ser. │ 162,787-792
76.	1999	Effect of NiO on Electrical Properties of NiAu-based Ohmic Contacts for p-type GaN │ Appl. Phys.Lett. │ 75,4145-4147
77.	1999	Formation and Deterioration Mechanisms of Low-resistance TaTi Ohmic Contacts for p-GaN │ J.Appl.Phys. │ 86,5079-5084
78.	1999	Near-noble Transition Metal-Based ohmic contacts to p-InP :Comparison of Base-Metals(Ni,Pd) │ Inst. Phys. Conf. Ser. │ 162,793-798
79.	1999	Ohmic Contacts to p-ZnSe and p-GaN Wide-Gap Semiconductors │ Electronics and Communications in Japan. │ 82,43-47
80.	1998	Development of InxGa1-x As-based Ohmic Contacts for p type GaAs by Radio-Frequency Sputtering │ J. Elect. Mater. │ 27,L64-L67
81.	1998	Effects of Intermediate Semiconductor Layers on Carrier Transport Mechanisms Through p-ZnSe/metal Interfaces │ J. Elect. Mater. │ 27,998-1002
82.	1998	Schottky Barrier Heights of Contact Metals to p-type ZnSe │ J.Elect. Mater. │ 27,772-775
83.	1997	Carrier Transport Mechanism of Ohmic Contacts to p-type Diamond │ J. Appl. Phys. │ 81,6815-6821
84.	1997	Carrier Transport Mechanisms Through the Metal/p-type Diamond Semiconductor Interface │ Diamond and Related Materials │ 6,847-851
85.	1997	Dependence of Electrical Properties on Work Functions of Metals Contacting to p-type GaN │ Appl. Surf. Sci. │ 117/118,373-379
86.	1997	Diffusion Barrier Properties of TaC Between Si and Cu │ Thin Solid Films. │ 301,142-148
87.	1997	Effects of Surface Treatments and Metal Work Functions on Electrical Properties at p-GaN/metal interfaces │ J. Appl. Phys. │ 81,1315-1322
88.	1997	Formation of WSi-based Ohmic Contacts to n-type GaAs │ Thin Solid Films. │ 300,218-222
89.	1997	InxGa1-xAs Ohmic Contacts to n-type GaAs with Tungsten Nitride Barrier │ J. Elect. Mater. │ 26,410 -414
90.	1997	InxGa1-xAs-based Ohmic Contacts to n-type GaAs with W-Nitride Barrier Prepared by Radio Frequency Sputtering │ Appl. Surf. Sci. │ 117/118,347-351
91.	1997	Schottky Barrier Heights of Metals Contacting to p-ZnSe │ J. Appl. Phys. │ 82,2393-2399
92.	1996	Cd and Te Based Ohmic Contact Materials to p-type ZnSe. │ J. Elect. Mater. │ 25,1823-1831
93.	1996	Cd-based Ohmic Contact Materials to p-ZnSe │ J. Cryst. Growth. │ 159,709-713
94.	1996	Contact Resistance at Interfaces Between Carbide- and Noncarbide- Forming Metals and p-Diamond │ Diamond Films and Technol. │ 6,61-76
95.	1996	Contact Resistance at Interfaces Between Carbide and Noncarbide-Forming Metals and p diamond │ Recent Progress in "Diamond Electronics │ ,1-16
96.	1996	Dependence of Electrical Properties on Workfunctions of Metals Contacting to p-ZnSe │ Jpn. J. Appl. Phys. │ 35,1657-1663
97.	1996	Diffusion Barrier Property of TaN Between Si and Cu │ Applied Surface Science │ 99,265-272
98.	1996	Effects of Deposition Sequence on Electrical Properties of InAs-Ni-W Ohmic Contacts to n-type GaAs │ Materials Trans. JIM │ 37,670-675
99.	1996	Effects of Small Amounts of Silver Added to NiGe Ohmic Contacts to n-type GaAs │ J. Electrochem. Soc. │ 143,1705 -1709
100.	1996	Effects of Surface Cleaning on Electrical Properties for Ni Contacts to p-type ZnSe │ J. Vac. Sci. Technol. │ B14,1812-1818
101.	1996	NiGe-Based Ohmic Contacts to n-type GaAs │ J.Elect.Mater. │ 25,1684-1694
102.	1996	WN Diffusion Barriers Between Si and Cu │ Thin Solid Films. │ 286,170-175
103.	1995	Development of Refractory NiGe-based Ohmic Contacts to n-type GaAs │ Inst. Phys. Conf. Ser. │ 141,721-726
104.	1995	InxGa1 xAs Ohmic Contacts to n-type GaAs Prepared by Sputter-deposition │ J. Elect. Mat. │ 24,333-339
105.	1994	Dependence of Contact Resistance on Metal Electronegativity for B-doped Diamond Films │ J. Appl. Phys. │ 75,5165-5170
106.	1994	Formation Mechanism of InxGa1-xAs Ohmic Contacts to n-type GaAs Prepared by RF Sputtering │ J. Elect. Mater. │ 23,983-989
107.	1994	Formation of Ohmic Contacts to p-type Diamond using Carbide Forming Metals │ J. Appl. Phys. │ 76,2293-2298
108.	1994	NiGe-based Ohmic Contacts to n type GaAs. Ⅱ. Effects of Au Addition │ J. Appl. Phys. │ 75,2530-2537
109.	1994	NiGe-based Ohmic Contacts to n type GaAs. Ⅰ. Effects of In Addition │ J. Appl.Phys. │ 75,2522-2529
110.	1994	Thermal Strain in Indium Thin Films Deposited on GaAs Substrates │ Thin Solid Films │ 250,164-171
111.	1992	Thermally Stable In based Onmic Contacts to p-type GaAs │ Inst. Phys. Conf. Ser. │ 120,179-182
112.	1992	Thermally Stable Non-gold Ohmic Contacts to n-type GaAs: I. NiGe Contact Metal │ J. Appl. Phys. │ 72,4183 -4190
113.	1992	Thermally Stable Non-gold Ohmic Contacts to n-type GaAs: II. NiSiW Contact Metal │ J. Appl. Phys. │ 72,4191 -4196
114.	1991	Deformation in thin film by thermal strain │ J. Vac. Sci. Technol. │ A9,2469-76
115.	1991	Development of Electrode Materials Used in superconductive Josephson Junction Devices │ Suiyo-kaishi │ 6,409-20
116.	1991	Effects of Substrate Sputter Precleaning on the Physical Properties of Evaporated Nb Films │ IBM Research Report RC 12388 │ ,1-30
117.	1991	Low Au Content Thermally Stable NiGe(Au)W Ohmic Contacts to n-type GaAs │ Appl. Phys. Lett. │ 58,2093 -2095
118.	1991	Ohmic Contact Materials for GaAs Semiconductor Devices │ Kinzoku │ 11,11-17
119.	1991	Thermally Stable Ohmic Contacts to p-type GaAs: IX. NiInW and NiIn(Mn)W Contact Metals │ J. Appl. Phys. │ 70,7443-7448
120.	1991	Thermally Stable, Low Resistance NiInWNx Ohmic Contacts to n-type GaAs Prepared by Sputter Deposition │ Appl. Phys. Lett. │ 59,2409-2411
121.	1991	WN(x) Schottky Diodes on Plasma Treated GaAs │ J. Appl. Phys. │ 69,2356-2364
122.	1990	Thermally Stable Ohmic Contact to n-type GaAs: VI. InW Contact Metal │ J. Appl. Phys. │ 67,4183-4189
123.	1990	Thermally Stable Ohmic Contact to n-type GaAs: VII. Addition of Ge or Si to NiInW Ohmic Contacts │ J. Appl. Phys. │ 68,2468-2474
124.	1990	Thermally Stable Ohmic Contact to n-type GaAs: VIII. Sputter-deposited InAs Contacts │ J. Appl. Phys. │ 68,2475-2481
125.	1989	Effects of Interfacial Microstructure on Ohmic Contacts to GaAs │ Appl. Surf. Sci. │ 41/42,195-200
126.	1989	Thermally Stable Ohmic Contact to n-type GaAs: IV. Roles of Ni on NiInW Contacts │ J. Appl. Phys. │ 65,3539-3545
127.	1989	Thermally Stable Ohmic Contact to n-type GaAs: V. MESFET's with NiInW Ohmic Contacts │ J. Appl. Phys. │ 65,3546-3551
128.	1989	WNx, Diodes on Plasma Treated GaAs Surfaces │ IEEE │ .ED-36,2595
129.	1988	Interfacial Microstructure of Tungsten Silicide Schottky Contacts to n-type GaAs │ J. Appl. Phys. │ 64,2113-2121
130.	1988	Thermally Stable Ohmic Contact to n-type GaAs:ⅲ.GeInW and NiInW Contact Metal │ J.Appl.Phys. │ 64,1974-1982
131.	1988	Thermally Stable, Low Resistance Ohmic Contact to n-type GaAs │ Inst. Phys. Conf. Ser. │ 91,55-60
132.	1987	Effects of Interfacial Microstructure on Uniformity and Thermal Stability of AuNiGe Ohmic Contacts to n-type GaAs │ J. Appl. Phys. │ 62,582-590
133.	1987	Thermally Stable Ohmic Contact to n-type GaAs: I. MoGeW Contact Metal │ J. Appl.Phys. │ 62,3288-3294
134.	1987	Thermally Stable Ohmic Contact to n-type GaAs: II. MoGeInW Contact Metal │ J. Appl. Phys. │ 62,3295-3303
135.	1987	Thermally Stable, Low-resistance NiInW Ohmic Contacts to n-type GaAs │ Appl. Phys. Lett. │ 51,664-666
136.	1987	Transmission Electron Microscopy Studies of the Microstructure of AuNiGe Ohmic Contact to n-type GaAs │ J. Vac. Sci. Technol. │ A5,1485-1486
137.	1986	Hillock Growth Kinetics in Thin Pb-In-Au Films │ Phil. Mag. │ 54,583-599
138.	1986	Microstructure Studies of AuNiGe Ohmic Contacts To n-type GaAs, │ J. Vac. Sci. Technol. │ B4,903-911
139.	1985	Strain in Evaporated Nb Thin Fi1ms, │ J. Appl. Phys. │ 57,211-215
140.	1985	Uniform and Thermally Stable AuGeNi Ohmic Contacts to GaAs │ Appl. Phys. Lett. │ 46,1141-1143
141.	1984	Au/Ti Resistors Used For Nb/Pb-alloy Josephson Junctions: I. Electrical Stability │ J. Appl. Phys. │ 56,2068-2075
142.	1984	Au/Ti Resistors Used For Nb/Pb-alloy Josephson Junctions: II. Thermal Stability │ J. Appl. Phys. │ 56,2076-2082
143.	1983	Recent Studies of Pb-alloy Josephson Junction Counterelectrode Materials │ Singakugiho SCE │ 83-35,49-54
144.	1983	Thermal Stability of Pb alloy Josephson Junction Electrode Materials: VII. Concentration Range of Single e-phase Pb-Bi Films Used in Counterelectrodes, │ J. Appl. Phys. │ 54,738-742
145.	1983	Thermal Stability of Pb-alloy Josephson Junction Electrode Materials: IX. Multilayered Pb-In-Au Electrodes │ J. Appl. Phys. │ 54,5771-5778
146.	1983	Thermal Stability of Pb-alloy Josephson Junction Electrode Materials: VIII. Effects of Au Addition to Pb-Bi Counterelectrodes │ J.Appl. Phys. │ 54,743-747
147.	1982	Changes in Microstructures of Pb-In Films During Thermal Cycling Between Room and Liquid Helium Temperature │ Trans. Japan Inst. Metals │ 23,488-499
148.	1982	Low Temperature Strain Behavior of Pb Thin Films on a Substrate │ Trans. AIME │ 13A,383-391
149.	1982	Oxygen-doped Pb-In-Au Films Suitable for Josephson Tunnel Junction Base Electrodes │ J. Appl. Phys. │ 53,4826-4833
150.	1982	Strain Relaxation Mechanisms of Pb and Pb alloy Thin Films on Silicon Substrates │ Thin Solid Films │ 89,165-173
151.	1982	Thermal Stability of Pb-alloy Josephso Junction Electrode Materials IV: Effects of Crystal Structure of Pb-Bi Counter Electrodes │ J. Appl. Phys. │ 53,337-345
152.	1982	Thermal Stability of Pb-alloy Josephson Junction Electrode Materials III: Correlation of Microstructure and Strain Relaxation in Pb-In-Au Base Electrodes │ J. Appl. Phys. │ 53,326-336
153.	1982	Thermal Stability of Pb-alloy Josephson Junction Electrode Materials V: Effects of Repeated Cooling Between 298 and 4.2K of Pb-Bi Counter Electrodes │ J. Appl. Phys. │ 53,346-352
154.	1982	Thermal Stability of Pb-alloy Josephson Junction Electrode Materials VI: Effects of Line Width of Pb-Bi Counter Electrodes │ J. Appl. Phys. │ 53,3560-3565
155.	1981	Interdiffusion in Bilayered Pb/ln Thin Films Studied by X-Ray Diffraction │ Trans. Japan Institute of Metals │ 22,567-578
156.	1981	Thermal Stability of Pb-alloy Josephson Junction Electrode Materials I: Effects of Film Thickness and Grain Size of Pb-In-Au Base Electrodes │ J. Appl. Phys. │ 52,1309-1319
157.	1981	Thermal Stability of Pb-alloy Josephson Junction Electrode Materials II: Effects of SiO Coating │ J. Appl. Phys. │ 52,1320-1327
158.	1980	Fabrication Process for Josephson Integrated Circuits │ IBM J. Res. Develop. │ 24,195-205
159.	1980	High Reliability Pb-alloy Josephson Junctions for Integrated Circuits │ Squid'8O │ ,297-327
160.	1980	High Reliability Pb-alloy Josephson Junctions for Integrated Circuits │ IEEE Trans. Electron Devices │ ED-27,1979- 1987
161.	1980	Josephson Tunnel-Junction Base Electrode Materials │ Science │ 208,944-950
162.	1980	Thermal Stability of Pb-alloy Josephson Junction Base Electrode Material │ LeVide, Les Couches Minces │ 1,486-489
163.	1980	Thermal Strain in Pb Thin Films V: Strain Relaxation Above Room Temperature │ Thin Solid Films │ 66,381-394
164.	1980	Thermal Strain in Pb Thin Films VI: Effects of Oxygen Doping │ Thin Solid Films │ 69,253-267
165.	1979	Diffusion in Thin Films Studied by X-Ray Diffraction Techniques │ Bulletin of Japan Institute of Metals-Review │ l8,262-269
166.	1979	Strain Relaxation in Pb-Alloy Josephson Junction Electrode Materials │ IEEE Trans. on Magnetics. │ MAG-15,443-445
167.	1979	Thermal Strain in Pb Thin Films III: Dependences of the Strain on Film Thickness and on Grain Size │ Thin Solid Films │ 59,105-116
168.	1979	Thermal Strain in Pb Thin Films lV: Effects of Multiple Cycling to 4.2K │ Thin Solid Films │ 60,l-9
169.	1978	Residual Strains of Pb Thin Films Deposited Onto Si Substrates │ Acta Met │ 26,175-183
170.	1978	Strain Relaxation Effects in Pb-Alloy Josephson Tunnel Junctions │ J. de Physique │ 39,1247-1250
171.	1978	Thermal Strain in Pb Thin Films II: Strain Relaxation Mechanisms │ Thin Solid Films │ 55,101-111
172.	1977	Ternary Phase Diagram Calculations II: Examples of Clustering and Ordering Systems │ Acta Met. │ 25,207 219
173.	1977	Thermal Strain in Pb Thin Films I: Dependence of the Strain on Crystal Orientation │ Thin Solid Films │ 46,109-115
174.	1976	X-ray Diffraction Study of Interdiffusion in Bimetallic Au/Pd Thin Films │ J. Appl. Phys. │ 47,2850-2856
175.	1976	X-ray Diffraction Study of Interdiffusion in Bimetallic Ag/Cu Thin Films │ J. Appl. Phys. │ 47,2857-2861
176.	1975	Ternary Diffusion in Multi layer AgAuCu Thin Films │ Thin Solid Films │ 25,465-482
177.	1975	X-ray Diffraction Studies on Epitaxial Temperature of Cu on Mica and in situ Grain Growth Processes of Polycrystalline Film │ Shinku │ 18,39-44
178.	1974	Diffusion in AgAuPd Thin Film Microcouples │ Acta Met │ 22,709-719
179.	1974	Miscibility Gap and Spinodal Surface of Ternary Regular Solutions │ UCLA Engineering Report ENG-7407 │ ,l-52
180.	1974	Sputter Saturated Solid Solution of Al-5.7 at.% Ag Alloy Prepared by Splat-quenching │ J. Mat. Sci. │ 9,1385-1387
181.	1973	On the Stability of Ternary Solid Solutions │ Bulletin of Japan-Institute of Metals-Review │ 12,775-788
182.	1973	Preparation of Thin Film Diffusion Microcouples in Ternary A11oys │ J. Vac. Sci. Tech. │ 10,445-449
183.	1972	On the Diffusion in an Al 6.8at.% Zn Alloy and the Effects of the Third Elements, Ag, Si or Mg, on it Studied by X Ray Small-Angle-Scattering │ J. Japan lnst. Metals │ 36,525-531
184.	1972	The Effects of the Addition of the Small Amounts of the Third Elements, Ag, Si, or Mg on the Solvus Temperature of G.P. Zones in an Al-6.8 at.% Zn A11oy │ J. Japan Inst.Metals │ 36,1164-1167
185.	1971/07	（博士取得論文）アルミニウム-亜鉛合金のG.P.ゾーンの形成,成長および溶解に関する研究 │
186.	1971	Effects of Small Amounts of Third Element Fe57 on the Growth of G.P. Zones in an Al-6.8 at.% Zn Alloy │ Phil. Mag. │ 24,719-725
187.	1971	On the Determination of the Solvus Temperature for Guinier-Preston Zones in an Al-6.8 at.% Zn A11oy │ J. Inst. Metals │ 99,160-163
188.	1971	On the Kinetics of the Decomposition of the Super Saturated Solid Solution │ Bulletin of Japan Inst. of Metals-Review │ 10,215-225
189.	1971	The Dissolution of Spherical G.P. Zones in a Binary Al-6.8 at.% Zn Alloy │ Phil. Mag. │ 24,527-538
190.	1970	The Effect of Plastic Deformation at -196!n on Pre-Precipitation in a Quenched Al-6.8 at.% Zn Alloy │ Phil.Mag. │ 21,1119-1125
191.	1970	The Structure and the Growth of Guinier-Preston Zones in an Al-6.8 at.% Zn Alloy │ Trans. Japan Inst.Metals │ 11,318-323
192.	1969	An Investigation of the Formation and Growth of G. P. Zones at Low Temperatures in Al-Zn Alloys and the Effects of the Third Elements, Silver, Silicon, and Magnesium │ Trans. AIME │ 245,815-819
193.	1969	On the Determination of the Spindle Temperature in an Al-6.8 at.% Zn Alloy │ Acta Met. │ 17,1517-1521
194.	1969	The Formation and Reversion of G.P.Zones in an Al-6.8 at% Zn Alloy and the Effects of Small Concentrations of Magnesium and Silver │ Acta.Met. │ 17,29-39
195.	2016/09	「他人の飯」のすすめ │ 盛和スカラーズソサイエティ「会報」 │ 20,26-27頁
196.	2016	村上正紀・R-GIRO機構長代理が本多記念賞を受賞 │ りつめいOCTOBER No.266(10,2016) P24 │
197.	2016/03	本多記念賞を受賞して │ (73)
198.	2015/01	海外留学の勧め │ 草津市立教育研究所　研究所だより │ 93
199.	2015	学生時代に届かなかった1通のＡｉｒ　Ｍａｉｌが恵んでくれた我が研究人生！ │ 応用物理 │ 84 (2)
200.	2014/02	総合討論「材料工学が目指す人材とは」 │ 学術の動向 │ ,40-47
201.	2014/02	科学・技術立国に不可欠な人材育成について－日米を比較して考える－ │ 学術の動向 │ ,26-34
202.	2014	今こそ100年先を見据えた教育ビジョンの真剣な議論を！ │ Harima Quarterly │ 119,2-5
203.	2013	人と馬の走る速さの世界記録の変遷から学ぶべきことは何か？ │ 応用物理　第82巻　第8号 │ ,659-660
204.	2011	”電子材料と共に歩んだ３０年間“ │ まてりあ │ (50),199-204
205.	2011	”日本のものづくりのグローバル化～近江商人から学ぶ～” │ 化学と工業 │ (64-1),1
206.	2010	材料科学・素材産業でのもう一つのグローバル化“ │ JRCM　NEWS │ (281)
207.	2009	Ti合金による自己形成バリアを用いたデュアルダマシンCu配線の特性 │ (社)電子情報通信学会信学技報 │
208.	2009	“Cu(Ti)/誘電体層界面における自己形成バリア層の構造および形成速度解析” │ Interface２００９, 界面科学技術機構会誌 │ 42
209.	2006	Cu(Ti)合金微細配線における極薄バリア層の自己組織形成 │ 日本金属学会会報（まてりあ） │ 45,879
210.	2006	p型SiC半導体/低抵抗TiAl基オーム性電極材の界面構造 │ 日本金属学会編集：材料開発のための顕微鏡法と応用写真集 │ ,200
211.	2006	Si半導体デバイス用配線材料 │ 「ナノマテリアル工学大系」第2巻ナノ金属 │ ,150-155
212.	2005	ULSI Si半導体デバイス用のCu配線材のナノ化の課題 │ 表面技術 │ 56,96-100
213.	2005	ナノ制御による電子デバイス材料の開発 │ 「M&E」 │ 10,136-142
214.	2004	21世紀における我が国の物づくり～米国より何を学ぶべきか～ │ 科学と工業 │ 1,3-13
215.	2004	p型SiC半導体／TiAl系オーミック・コンタクト材の界面構造 │ まてりあ │ 4,992
216.	2003/11	次世代Si-ULSIデバイス用ナノCu配線材料の課題 │ 電子材料 │ ,47-49
217.	2003	21世紀での偶然への期待 │ イオン工学ニュース │ 53,3
218.	2003	国際戦略を！！ │ Inter Lab │ 52,31-34
219.	2003	日本金属学会における材料戦略への期待 │ まてりあ │ 42,101-103
220.	2003	半導体の超微細化、材料多様化の新時代はコンタクト工学が切りひらく │ HARIMA Quarterly │ 74,4-6
221.	2003	豊かな発想と独自の技術で薄膜の世界を拓く │ SAMCO NOW │ 50,4-7
222.	2003	半導体ー金属電極間の傾斜材料 │ ,269-276
223.	2003/08	ナノ蒸着オーム性電極材の形成技術 │ ,236-240
224.	2003	自然科学の発展に双葉電子記念財団の末長き研究支援を願って │ 双葉電子記念財団創設 │
225.	2002	Si半導体デバイス用配線材料ナノ化での課題 │ 化学工業 │ 53,50-55
226.	2002	金属・半導体界面反応層の微細構造と電気特性 │ 電子顕微鏡法の実践と応用写真集，日本鉄鋼協会・日本金属学会出版 │ ,210
227.	2002	金属・半導体接合界面制御によるオーム性電極材料開発～n型GaAs化合物半導体を例として～ │ 真空 │ 45,783-790
228.	2002	半導体デバイスを支える材料の微細構造 │ 電子顕微鏡法の実践と応用写真集, 日本鉄鋼協会・日本金属学会出版 │ ,69-80
229.	2001	21世紀における我が国の物づくり・人づくり │ 近畿化学工業 │ 8,1-3
230.	2001	21世紀における工学の課題 │ KOYO Engineering Journal │ 159,6
231.	2001	GaAs系化合物半導体デバイス用超機能電極材料の開発 │ 工業材料 │ 49,42-45
232.	2001	コンタクト工学の現状～半導体デバイスの界面科学～ │ 機械の研究 │ 53,431-441
233.	2001	シリコンウエハー戦略について │ まてりあ │ 40,481-485
234.	2000	GaNオーム性電極形成技術 │ 応用物理 │ 69,1335-1336
235.	2000	我が国のシリコンウエーハ戦略について │ 新金属工業 │ 45,9-14
236.	2000	新時代を迎えたエレクトロニクス配線技術 │ まてりあ │ 29,901-908
237.	2000	人材育成について～日米を比較して考える～ │ 新金属工業 │ 45,38-43
238.	1999	Cu多層配線用バリア技術 │ 応用物理 │ 68,1247-1251
239.	1999	p-GaNに対する低抵抗TaTiオーミックコンタクト材の形成及び劣化機構 │ 電子情報通信学会 │
240.	1998	Cu配線用スパッタ蒸着バリア材 │ ,159-171頁
241.	1998	p-ZnSe 及びp-GaNワイドギャップ半導体のオーム性電極 │ 電子情報通信学会 │ J81-C-Ⅱ,805-809
242.	1998	Electrical Properties at p-ZnSe/metal Interface │ J. Elect. Mater. │ 27,929-935
243.	1998	p型GaNに対するオーム性電極材の酸素アニール効果 │ 電子情報通信学会 │
244.	1998	p型GaNに対する低抵抗オーム性 Ta/Ti 電極 │ 電子情報通信学会 │
245.	1998	なぜショットキーバリアは形成されるか │ 応用物理 │ 67,149-154
246.	1998	金属・半導体界面反応層の微細構造と電気特性 │ 日本金属学会会報 │ 37,998
247.	1998	半導体デバイス用の材料開発の変容 │ 神戸製鋼技報 │ 48,2-4
248.	1996	金属/半導体及び半導体/半導体接合界面におけるエネルギー障壁 │ 日本金属学会誌「まてりあ」 │ 5,501-505
249.	1996	半導体ダイヤモンド/金属界面の電気伝導機構 │ ニューダイヤモンド │ 12,6-11
250.	1995	薄膜作製と応用ハンドブック │ ,36-47頁
251.	1995	化合物半導体用コンタクト材料のメゾスコピック化 │ 日本金属学会誌 │ 8,987-991
252.	1995	国際化渦中の日本のエレクトロニクス企業で材料屋は生き残れるだろうか？ │ 溶接学会誌 │ 64,55-59
253.	1994	GaAs半導体のコンタクト材料の問題点と最近の研究 │ まてりあ │ 33,703-708
254.	1994	GaAs半導体デバイス用の耐熱性オーミック・コンタクト材の開発 │ まてりあ │ 33,631-633
255.	1993	蒸着された金属薄膜の強度 │ 表面 │ 31,41-49
256.	1990	薄膜の応力による形状変化 │ 日本金属学会報 │ 29,240-43